Sealed bonded structures and methods for forming the same

A bonded structure comprising:

• a first element having a front side and a back side opposite the front side, the first element having a first plurality of conductive contact pads and a first nonconductive field region at the front side of the first element;
• a second element having a second plurality of conductive contact pads and a second nonconductive field region at a front side of the second element, the second plurality of conductive contact pads directly bonded to the first plurality of conductive contact pads along an interface structure without an intervening adhesive, at least some of the directly bonded contact pads providing electrical communication between the first and second elements;
• an integrated device coupled to or formed in the first element or the second element;
• and
• a laterally elongated conductive structure extending from the back side of the first element, through a semiconductor region of the first element, and to and at least partially through the interface structure, the laterally elongated conductive structure extending continuously around multiple sides of the integrated device and providing an effectively closed profile around the integrated device,
• wherein one of the first plurality of conductive contact pads and one of the second plurality of conductive contact pads define a first bonded pair of pads and another one of the first plurality of conductive contact pads and another one of the second plurality of conductive contact pads define a second pair of bonded pads, and wherein at least a portion of the laterally elongated conductive structure is positioned between the first pair of bonded pads and the second pair of bonded pads from a plan view.

A bonded structure comprising:

• a first element having a semiconductor region;
• a second element bonded to the first element along an interface structure, the interface structure comprising a conductive interface feature and a nonconductive interface feature disposed about the conductive interface feature, the conductive interface feature providing mechanical and electrical connection between the first and second elements;
• an integrated device coupled to or formed in the first element or the second element;
• and
• a laterally elongated conductive structure disposed in a trench extending from a back side of the first element, through the semiconductor region, and to and at least partially through the interface structure, the laterally elongated conductive structure extending continuously around multiple sides of the integrated device.

A method of forming a bonded structure comprising:

• providing a first element comprising a first contact pad at a bonding surface of the first element;
• providing a second element comprising a second contact pad at a bonding surface of the second element;
• directly bonding the first contact pad of the first element to the second contact pad of the second element along an interface structure without an intervening adhesive, the interface structure providing mechanical and electrical connection between the first and second elements;
• forming, after said directly bonding, a laterally elongated channel from a back side of the first element, through a semiconductor region of the first element, to at least the interface structure;
• and
• after forming the laterally elongated channel, providing a laterally elongated conductive structure within the channel, the laterally elongated conductive structure extending continuously around multiple sides of an integrated device coupled to or formed in the first element or the second element.

A bonded structure comprising:

• a first element having a front side and a back side opposite the front side, the first element having a first nonconductive field region and a first plurality of conductive contact pads at least partially embedded in the first nonconductive field region, the first nonconductive field region and the first plurality of conductive contact pads disposed on a semiconductor region of the first element;
• a second element having a second nonconductive field region and a second plurality of conductive contact pads at least partially embedded in the second nonconductive field region, the second plurality of contact pads directly bonded to the first plurality of contact pads and the second nonconductive field region directly bonded to the first nonconductive field region along a bonding interface without an intervening adhesive, at least some of the directly bonded contact pads providing electrical communication between the first and second elements;
• an integrated device coupled to or formed with the first element or the second element;
• and
• a laterally elongated conductive structure comprising a trench extending from the back side of the first element through the semiconductor region and at least a portion of the first nonconductive field region, the laterally elongated conductive structure comprising a conformally-filled via including a conductive layer conformally coating an interior of the trench, the laterally elongated conductive structure extending continuously around at least two sides of the integrated device.