Post-CMP semiconductor cleaning composition comprising an amine/alkanolamine mixture

Abstract

There is provided a method of cleaning semiconductor substrates that is excellent in cleaning performance with respect to semiconductor substrates having undergone a chemical mechanical polishing process and corrosion prevention performance with respect to metal films. This method includes a cleaning step of cleaning a semiconductor substrate having undergone the CMP using a cleaning liquid. The cleaning liquid shows alkaline properties and contains: a component A that is at least one selected from the group consisting of a primary amine, a secondary amine, and a tertiary amine, provided that a compound represented by a specific formula (a) is excluded; and a component B that is a compound represented by the specific formula (a). The mass ratio of the component B content to the component A content is not more than 0.01. The cleaning liquid applied to the semiconductor substrate has a temperature of not lower than 30° C.

Dependencies are inferred from the claim text.