Substrate processing apparatus and method of manufacturing semiconductor device

A substrate processing apparatus comprising:

• a process vessel in which a substrate is processed, wherein a process gas is excited into plasma in the process vessel;
• a coil wound around an outer peripheral surface of the process vessel while being spaced apart from the outer peripheral surface, wherein a high frequency power is supplied to the coil;
• and
• an electrostatic shield configured to limit an influence of an electric field acting between the outer peripheral surface of the process vessel and the coil specifically where an amplitude of a voltage standing wave applied to the coil is maximized.

A method of manufacturing a semiconductor device comprising:

• (a) loading a substrate into a process vessel;
• (b) plasma-exciting the process gas supplied into the process vessel by supplying a high frequency power to a coil wound around an outer peripheral surface of the process vessel while being spaced apart from the outer peripheral surface;
• and
• (c) processing the substrate by the process gas plasma-excited,
• wherein an electrostatic shield disposed between the outer peripheral surface of the process vessel and the coil is used in (b), the electrostatic shield comprising a partition extending in a circumferential direction of the coil and configured to partition between a part of the coil and the outer peripheral surface of the process vessel.

A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform:

• (a) loading a substrate into a process vessel;
• (b) plasma-exciting the process gas supplied into the process vessel by supplying a high frequency power to a coil wound around an outer peripheral surface of the process vessel while being spaced apart from the outer peripheral surface;
• and
• (c) processing the substrate by the process gas plasma-excited,
• wherein an electrostatic shield disposed between the outer peripheral surface of the process vessel and the coil is used in (b), the electrostatic shield comprising a partition extending in a circumferential direction of the coil and configured to partition between a part of the coil and the outer peripheral surface of the process vessel.