Dynamic sampling method and device for semiconductor manufacture
AssigneeWinbond Electronics Corp.
InventorsKazuhiro Segawa, Chiang-Sheng Liu
Life of this patent
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Abstract
A dynamic sampling method and device for semiconductor manufacture are provided. The dynamic sampling method includes: generating an N-dimensional virtual image of a wafer based on a design rule and at least one of a quality control data and context data; measuring a critical pattern in the N-dimensional virtual image to generate a virtual metrology result by using a virtual metrology; determining whether the virtual metrology result is larger than a threshold; not performing a measurement on the wafer in a case that the virtual metrology result is larger than the threshold; and performing the measurement on the wafer in a case that the virtual metrology result is not larger than the threshold.
Claims18
A dynamic sampling method for semiconductor manufacture performed by a processor, comprising:
- generating an N-dimensional virtual image of a wafer based on a design rule and at least one of a quality control data and context data, wherein the quality control data comprises at least one of in line quality control (IQC) data and machine quality control (MQC) data;
- measuring a critical pattern in the N-dimensional virtual image to generate a virtual metrology result by using a virtual metrology;
- determining whether to perform a measurement on the wafer by determining whether the virtual metrology result is larger than a threshold;
- not performing the measurement on the wafer in a case that the virtual metrology result is larger than the threshold;
- and
- performing the measurement on the wafer in a case that the virtual metrology result is not larger than the threshold.
A dynamic sampling device for semiconductor manufacture, comprising:
- a processor;
- and
- a storage unit,
- wherein the processor is configured to:
- generate an N-dimensional virtual image of a wafer based on a design rule and at least one of a quality control data and context data, wherein the quality control data comprises at least one of in line quality control (IQC) data and machine quality control (MQC) data;
- measure a critical pattern in the N-dimensional virtual image to generate a virtual metrology result by using a virtual metrology;
- determine whether to perform a measurement on the wafer by determining whether the virtual metrology result is larger than a threshold;
- not perform the measurement on the wafer in a case that the virtual metrology result is larger than the threshold;
- and
- perform the measurement on the wafer in a case that the virtual metrology result is not larger than the threshold.
Dependencies are inferred from the claim text.