Method for forming resist pattern and radiation-sensitive resin composition
AssigneeJsr Corporation
InventorsKazuki Kasahara, Katsuaki Nishikori, Sosuke Osawa, Miki Tamada, Motohiro Shiratani
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Abstract
Provided are a method for forming a resist pattern that demonstrates excellent performance in sensitivity, resolution, etc. in an exposure step when a next-generation exposure technique is applied, and a radiation-sensitive resin composition. The method for forming a resist pattern includes step (1) of forming a resist film in which a content of a radiation-sensitive acid generator (C) is 0.1% by mass or less, step (2) of exposing the resist film to EUV or an electron beam (EB), and step (3) of developing the resist film exposed in the step (2).
Claims17
A method for forming a resist pattern, the method comprising:
- forming a resist film, the resist film optionally comprising a radiation-sensitive acid generator (C), a content of which in the resist film is 0.1% by mass or less based on a total amount of components of a radiation-sensitive resin composition other than the solvent;
- exposing the resist film to EUV or an electron beam (EB);
- and
- developing the resist film exposed.
A radiation-sensitive resin composition comprising:
- (A2) a resin comprising a group that dissociates due to EUV or electron beam (EB) exposure;
- (B) a solvent;
- and
- (C) a radiation-sensitive acid generator,
- wherein in the radiation-sensitive resin composition, the radiation-sensitive acid generator (C) accounts for 0.1% by mass or less based on a total amount of components of the radiation-sensitive composition other than the solvent (B).
A radiation-sensitive resin composition consisting of:
- (A2) a resin comprising a group that dissociates due to EUV or electron beam (EB) exposure;
- and
- (B) a solvent.
Dependencies are inferred from the claim text.