Pattern forming method, kit, and resist composition

A kit comprising:

• a chemical liquid;
• and
• an actinic ray-sensitive or radiation-sensitive resin composition,
• wherein the chemical liquid comprises:
• a mixture of two or more kinds of organic solvents;
• and
• an impurity metal containing one kind of metal selected from the group consisting of Fe, Cr, Ni, and Pb,
• wherein a vapor pressure of the mixture is 50 to 1,420 Pa at 25° C.,
• in a case where the chemical liquid contains one kind of the impurity metal, a content of the impurity metal in the chemical liquid is 0.001 to 100 mass ppt, and
• in a case where the chemical liquid contains two or more kinds of the impurity metals, a content of each of the impurity metals in the chemical liquid is 0.001 to 100 mass ppt,
• wherein the actinic ray-sensitive or radiation-sensitive resin composition comprises a resin having a repeating unit represented by Formula (AI), and the resin contains a repeating unit represented by General Formula (I),
• in Formula (AI), Xa1 represents a hydrogen atom or an alkyl group which may have a substituent,
• T represents a single bond or a divalent linking group,
• Ra1 to Ra3 each independently represent an alkyl group or a cycloalkyl group, and
• two out of Ra1 to Ra3 may form a cycloalkyl group by being bonded to each other,
• in General Formula (I), R41, R42, and R43 each independently represent a hydrogen atom, an alkyl group, a halogen atom, a cyano group, or an alkoxycarbonyl group, but in a case where R42 and Ar4 may form a ring by being bonded to each other, R42 represents a single bond or an alkylene group,
• X4 represents a single bond, —COO—, or —CONR64—,
• R64 represents a hydrogen atom or an alkyl group,
• L4 represents a single bond or an alkylene group,
• Ar4 represents a benzene ring group, and
• n represents an integer of 1 to 5.

A resist composition comprising:

• a mixture of two or more kinds of organic solvents;
• a resin having a repeating unit represented by Formula (AI);
• and
• an impurity metal containing one kind of metal selected from the group consisting of Fe, Cr, Ni, and Pb,
• wherein a vapor pressure of the mixture is 50 to 1,420 Pa at 25° C.,
• in a case where the resist composition contains one kind of the impurity metal, a content of the impurity metal in the resist composition is 0.001 to 100 mass ppt, and
• in a case where the resist composition contains two or more kinds of the impurity metals, a content of each of the impurity metals in the resist composition is 0.001 to 100 mass ppt,
• wherein the resin contains a repeating unit having a lactone structure and a repeating unit represented by General Formula (I),
• in Formula (AI), Xa1 represents a hydrogen atom or an alkyl group which may have a substituent,
• T represents a single bond or a divalent linking group,
• Ra1 to Ra3 each independently represent an alkyl group or a cycloalkyl group, and
• two out of Ra1 to Ra3 may form a cycloalkyl group by being bonded to each other,
• in General Formula (I), R41, R42, and R43 each independently represent a hydrogen atom, an alkyl group, a halogen atom, a cyano group, or an alkoxycarbonyl group, but in a case where R42 and Ar4 may form a ring by being bonded to each other, R42 represents a single bond or an alkylene group,
• X4 represents a single bond, —COO—, or —CONR64—,
• R64 represents a hydrogen atom or an alkyl group,
• L4 represents a single bond or an alkylene group,
• Ar4 represents a benzene ring group, and
• n represents an integer of 1 to 5.

A resist composition comprising:

• a mixture of two or more kinds of organic solvents;
• a resin having a repeating unit represented by Formula (AI);
• and
• an impurity metal containing one kind of metal selected from the group consisting of Fe, Cr, Ni, and Pb,
• wherein in a case where the resist composition contains one kind of the impurity metal, a content of the impurity metal in the resist composition is 0.001 to 100 mass ppt,
• in a case where the resist composition contains two or more kinds of the impurity metals, a content of each of the impurity metals in the resist composition is 0.001 to 100 mass ppt, and
• the resist composition satisfies at least any one of the following conditions 1 to 7,
• condition 1:
• the mixture contains at least one kind of organic solvent selected from the following first organic solvents and at least one kind of organic solvent selected from the following second organic solvents,
• condition 2:
• the mixture contains at least one kind of organic solvent selected from the following first organic solvents and at least one kind of organic solvent selected from the following third organic solvents,
• condition 3:
• the mixture contains at least one kind of organic solvent selected from the following second organic solvents and at least one kind of organic solvent selected from the following third organic solvents,
• condition 4:
• the mixture contains at least one kind of organic solvent selected from the following first organic solvents, at least one kind of organic solvent selected from the following second organic solvents, and at least one kind of organic solvent selected from the following third organic solvents,
• condition 5:
• the mixture contains at least one kind of organic solvent selected from the following first organic solvents, the following second organic solvents, and the following third organic solvents and at least one kind of organic solvent selected from the following fourth organic solvents,
• condition 6:
• the mixture contains two or more kinds of organic solvents selected from the following fourth organic solvents,
• condition 7:
• the mixture contains at least one kind of organic solvent selected from the following first organic solvents, the following second organic solvents, and the following third organic solvents and the following fifth organic solvent,
• first organic solvents:
• propylene glycol monomethyl ether, cyclopentanone, and butyl acetate,
• second organic solvents:
• propylene glycol monomethyl ether acetate, cyclohexanone, ethyl lactate, 2-hydroxymethyl isobutyrate, and cyclopentanone dimethyl acetal,
• third organic solvents:
• y-butyrolactone, dimethyl sulfoxide, ethylene carbonate, propylene carbonate, and 1-methyl-2-pyrrolidone,
• fourth organic solvents:
• isoamyl acetate, methyl isobutyl carbinol, diethylene glycol monomethyl ether, dimethyl ether, diethyl ether, diethylene glycol monoisobutyl ether, diglyme, diethylene glycol diethyl ether, triethylene glycol dimethyl ether, tetraethylene glycol dimethyl ether, triethylene glycol butyl methyl ether, diethylene glycol monobutyl ether, anisole, 1,4-dimethoxybenzene, 1,2-dimethoxybenzene, 1,3-dimethoxybenzene, 1,4-diphenoxybenzene, 4-methoxytoluene, and phenetole,
• fifth organic solvent:
• 3-methoxymethyl propionate,
• the resin contains a repeating unit represented by General Formula (I),
• in Formula (AI), Xa1 represents a hydrogen atom or an alkyl group which may have a substituent,
• T represents a single bond or a divalent linking group,
• Ra1 to Ra3 each independently represent an alkyl group or a cycloalkyl group, and
• two out of Ra1 to Ra3 may form a cycloalkyl group by being bonded to each other,
• in General Formula (I), R41, R42, and R43 each independently represent a hydrogen atom, an alkyl group, a halogen atom, a cyano group, or an alkoxycarbonyl group, but in a case where R42 and Ar4 may form a ring by being bonded to each other, R42 represents a single bond or an alkylene group,
• X4 represents a single bond, —COO—, or —CONR64—,
• R64 represents a hydrogen atom or an alkyl group,
• L4 represents a single bond or an alkylene group,
• Ar4 represents a benzene ring group, and
• n represents an integer of 1 to 5.