Electrically tunable quantum information processing device based on a doped semiconductor structure embedded with a defect

An optical source device, comprising:

• a first layer of a first semiconductor;
• a second layer of a second semiconductor;
• a third layer of a third semiconductor located between the first and second layers, the third layer comprising a defect addressable by optical means;
• a first terminal in electric contact with the first layer;
• and
• a second terminal in electric contract with the second layer,
• wherein:
• the defect comprises an optically bright excited state for generating an optical emission;
• the first and second terminals are configured to apply an electric bias across the third layer;
• the optical source device is adapted to receive a first optical excitation for preparing the defect into the optically bright excited state for generating the optical emission;
• the electric bias is configured to control a timing, an emission spectral linewidth, or a wavelength of the optical emission from the defect;
• and
• wherein the electric bias is reverse bias across a p-i-n junction of the optical source device and is larger than a threshold bias value above which charges in the third layer are depleted and is configured to achieve a large Stark shift in the defect for providing a wavelength tunability and to reduce spectral diffusion of the optical emission.

An optical source device, comprising

• a first layer of a first semiconductor;
• a second layer of a second semiconductor;
• a third layer of a third semiconductor located between the first and second layers, the third layer comprising a defect addressable by optical means;
• a first terminal in electric contact with the first layer;
• and
• a second terminal in electric contract with the second layer,
• wherein:
• the defect comprises an optically bright excited state for generating an optical emission;
• the first and second terminals are configured to apply an electric bias across the third layer;
• the optical source device is adapted to receive a first optical excitation for preparing the defect into the optically bright excited state for generating the optical emission;
• the electric bias is configured to control a timing, an emission spectral linewidth, or a wavelength of the optical emission from the defect;
• and
• wherein the third layer comprises another defect and wherein the optical source device is configured to align the optical emission of the defect and optical emission from the another defect into resonance.