Diamonds and hetero-epitaxial method of forming diamonds
AssigneeAdvanced Diamond Holdings, LLC
InventorsJohn P. Ciraldo, Jonathan Levine-Miles
Life of this patent
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Abstract
A method of forming a plurality of diamonds provides a base, epitaxially forms a first sacrificial layer on the base, and then epitaxially forms a first diamond layer on the first sacrificial layer. The first sacrificial layer has a first material composition, and the first diamond layer is a material that is different from the first material composition. The method then epitaxially forms a second sacrificial layer on the first diamond layer, and epitaxially forms a second diamond layer on the second sacrificial layer. The second sacrificial layer has the first material composition. The base, first and second sacrificial layers, and first and second diamond layers form a heteroepitaxial super-lattice.
Claims22
A method of forming a plurality of diamonds, the method comprising:
- providing a base;
- epitaxially forming a first sacrificial layer on the base, the first sacrificial layer having a first material composition;
- epitaxially forming a first diamond layer on the first sacrificial layer, the first diamond layer being a material that is different from the first material composition;
- epitaxially forming a second sacrificial layer on the first diamond layer, the second sacrificial layer comprising the first material composition;
- and
- the first sacrificial layer, and the first diamond layer defining repeating layers of a heteroepitaxial super-lattice, wherein the first diamond layer is configured to be separable from the first sacrificial layer.
A heteroepitaxial super-lattice comprising:
- a first sacrificial layer on a base comprising a base material composition, the first sacrificial layer epitaxially formed using the crystal structure of the base and having a first material composition;
- a first diamond layer on the first sacrificial layer, the first diamond layer epitaxially formed using the crystal structure of the first sacrificial layer and being a material that is different from the first material composition;
- a second sacrificial layer on the first diamond layer, the second sacrificial layer having the first material composition;
- and
- a second diamond layer on the second sacrificial layer, the second diamond layer being a material that is different from the first material composition,
- wherein the first diamond layer is sufficiently thick to function as a free-standing rigid substrate and/or wafer after separating from the sacrificial layer.
A method of forming a plurality of diamonds, the method comprising:
- providing a substrate holder with a cavity containing a base, the base comprising a base material composition;
- epitaxially forming a first sacrificial layer on the base and within the cavity, the first sacrificial layer having a first material composition;
- epitaxially forming a first diamond layer on the first sacrificial layer within the cavity, the first diamond layer being a material that is different from the first material composition;
- epitaxially forming a second sacrificial layer on the first diamond layer within the cavity, the second sacrificial layer being the first material composition;
- and
- epitaxially forming a second diamond layer on the second sacrificial layer within the cavity, the first sacrificial layer, the first diamond layer, the second sacrificial layer, and the second diamond layer being part of a heteroepitaxial super-lattice, wherein the first diamond layer is configured to be separable from the first sacrificial layer.
Dependencies are inferred from the claim text.