Powder for growing gallium oxide single crystal and method of manufacturing the same
AssigneeKorea Institute of Ceramic Engineering and Technology
InventorsSi Young Bae, Seong Min Jeong, Yun Ji Shin, Myung Hyun Lee
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Abstract
The present invention relates to a powder for growing a gallium oxide single crystal and a method of manufacturing the same, and the powder for growing a gallium oxide single crystal according to an embodiment of the present invention is made of gallium oxide and has a bulk density of 0.7 g/cm3 or more and 1.0 g/cm3 or less.
Claims8
A powder for growing a gallium oxide single crystal, made of gallium oxide, wherein the powder has a bulk density of 0.9 g/cm3 or more and 1.0 g/cm3 or less, and has a BET-specific surface area of 1.5 m2/g or more and 2.6943 m2/g or less.
A method of manufacturing a powder for growing a gallium oxide single crystal, comprising:
- a vaporization step of heating and vaporizing gallium, to obtain vaporized gallium;
- an oxidation step of oxidizing the vaporized gallium, to obtain an oxidized gallium oxide;
- a crystallization step of cooling and crystallizing the oxidized gallium oxide, to obtain a crystallized gallium oxide;
- a collection step of collecting the crystallized gallium oxide to obtain a gallium oxide powder;
- and
- a densification step of making a bulk density of the gallium oxide powder be 0.9 g/cm3 or more and 1.0 g/cm3 or less, and making a BET-specific surface area of the gallium oxide powder be 1.5 m2/g or more and 2.6943 m2/g or less.
Dependencies are inferred from the claim text.