Concurrent cationic and anionic metal halide perovskite defect passivation method and device
AssigneeKing Abdullah University of Science and Technology
InventorsFurkan Halis Isikgor, Stefaan De Wolf
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Abstract
A semiconductor device includes a substrate, a first electrode located on the substrate, a metal halide perovskite layer located on the first electrode, a second electrode located on the metal halide perovskite layer, and passivation molecules that passivate the metal halide perovskite layer. The metal halide perovskite layer has (1) a top surface defect located in a top surface and (2) an inter-grain defect located at an interface between two adjacent grains, and the passivation molecules passivate at least one of the top surface defect and the inter-grain defect.
Claims16
A semiconductor device comprising:
- a substrate;
- a first electrode located on the substrate;
- a metal halide perovskite layer located on the first electrode;
- a second electrode located on the metal halide perovskite layer;
- and
- passivation molecules that passivate the metal halide perovskite layer, the passivation molecules having a head group, a backbone group, and a tail group, the backbone group being connected to each of the head group and the tail group, the tail group including a phenyl ring, and the head group having an electron rich-domain and an electron-poor domain, with the electron rich-domain having higher valence electron concentration than the electron-poor domain,
- wherein the metal halide perovskite layer has (1) a top surface defect located in a top surface and (2) an inter-grain defect located at an interface between two adjacent grains,
- wherein the passivation molecules passivate at least one of the top surface defect and the inter-grain defect, and
- wherein the passivation molecules include a phenyl tail group, two ═NH pendant groups, and an NH3+Cl− head group attached to a —CH2—CH2—NH—C—NH—C— backbone group.
A solar cell comprising:
- a substrate;
- a first electrode located on the substrate;
- a hole transport layer located on the first electrode;
- a metal halide perovskite layer located on the hole transport layer;
- an electron transport layer located on the metal halide perovskite layer;
- a second electrode located on the electron transport layer;
- and
- passivation molecules that passivate the metal halide perovskite layer, the passivation molecules having a head group, a backbone group, and a tail group, the backbone group being connected to each of the head group and the tail group, the tail group including a phenyl ring, and the head group having an electron rich-domain and an electron-poor domain, with the electron rich-domain having higher valence electron concentration than the electron-poor domain,
- wherein the metal halide perovskite layer has (1) a top surface defect located in a top surface and (2) an inter-grain defect located at an interface between two adjacent grains,
- wherein the passivation molecules passivate at least one of the top surface defect and the inter-grain defect, and
- wherein the passivation molecules include a phenyl tail group, two ═NH pendant groups, and an NH3+Cl− head group attached to a —CH2—CH2—NH—C—NH—C— backbone group.
A semiconductor device comprising:
- a substrate;
- a first electrode located on the substrate;
- a metal halide perovskite layer located on the first electrode;
- a second electrode located on the metal halide perovskite layer;
- and
- passivation molecules that passivate the metal halide perovskite layer,
- wherein the metal halide perovskite layer has (1) a top surface defect located in a top surface and (2) an inter-grain defect located at an interface between two adjacent grains,
- wherein the passivation molecules passivate at least one of the top surface defect and the inter-grain defect, and
- wherein the passivation molecules include a phenyl tail group, two ═NH pendant groups, and an NH3+Cl− head group attached to a —CH2—CH2—NH—C—NH—C— backbone group.
Dependencies are inferred from the claim text.