Display device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
Estimating the term…
Disclosed is a display device including a transistor showing extremely low off current. In order to reduce the off current, a semiconductor material whose band gap is greater than that of a silicon semiconductor is used for forming a transistor, and the concentration of an impurity which serves as a carrier donor of the semiconductor material is reduced. Specifically, an oxide semiconductor whose band gap is greater than or equal to 2 eV, preferably greater than or equal to 2.5 eV, more preferably greater than or equal to 3 eV is used for a semiconductor layer of a transistor, and the concentration of an impurity which serves as a carrier donor included is reduced. Consequently, the off current of the transistor per micrometer in channel width can be reduced to lower than 10 zA/μm at room temperature and lower than 100 zA/μm at 85° C.
A display device comprising:
A display device comprising:
Dependencies are inferred from the claim text.