Compound semiconductor device, amplifier, and method for manufacturing compound semiconductor device
AssigneeFujitsu Limited
InventorsShirou Ozaki, Junji Kotani, Toshihiro Ohki, Naoya Okamoto
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Abstract
A compound semiconductor device includes a carrier supply layer, a channel layer disposed over the carrier supply layer and configured to include InGaAs, and an etching stopper layer disposed over the channel layer, and configured to include a first layer disposed over the channel layer and configured to include Inx1Ga1-x1P, and a second layer disposed over the first layer and configured to include Inx2Ga1-x2P, wherein x1 is greater than 0 and less than or equal to 1, x2 is greater than or equal to 0 and less than 1, and x1 is greater than x2.
Claims19
A compound semiconductor device comprising:
- a carrier supply layer;
- a channel layer disposed over the carrier supply layer and configured to include InGaAs;
- and
- an etching stopper layer disposed over the channel layer, and configured to include
- a first layer disposed over the channel layer and configured to include Inx1Ga1-x1P, and
- a second layer disposed over the first layer and configured to include Inx2Ga1-x2P,
- wherein x1 is greater than 0 and less than or equal to 1, x2 is greater than or equal to 0 and less than 1, and x1 is greater than x2.
An amplifier comprising:
- a digital predistortion circuit configured to compensate for a nonlinear distortion of an input signal;
- a mixer configured to mix the input signal whose nonlinear distortion has been compensated for with an alternate current signal;
- and
- a power amplifier configured to amplify the input signal mixed with the alternate current signal, the power amplifier including
- a carrier supply layer,
- a channel layer disposed over the carrier supply layer and configured to include InGaAs, and
- an etching stopper layer disposed over the channel layer, and configured to include
- a first layer disposed over the channel layer and configured to include Inx1Ga1-x1P, and
- a second layer disposed over the first layer and configured to include Inx2Ga1-x2P,
- wherein x1 is greater than 0 and less than or equal to 1, x2 is greater than or equal to 0 and less than 1, and x1 is greater than x2.
A method for manufacturing a compound semiconductor device, the method comprising:
- forming a channel layer over a carrier supply layer, the channel layer including InGaAs;
- and
- forming an etching stopper layer over the channel layer,
- wherein the etching stopper layer includes
- a first layer disposed over the channel layer and configured to include Inx1Ga1-x1P, and
- a second layer disposed over the first layer and configured to include Inx2Ga1-x2P,
- wherein x1 is greater than 0 and less than or equal to 1, x2 is greater than or equal to 0 and less than 1, and x1 is greater than x2.
Dependencies are inferred from the claim text.