Semiconductor device and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hua Yu, An-Jhih Su, Chia-Nan Yuan, Shih-Guo Shen, Der-Chyang Yeh, Yu-Hung Lin, Ming Shih Yeh
Life of this patent
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Abstract
In some embodiments, laser devices having contact pads are formed. The laser diodes are formed from a doped semiconductive material. The contact pads and semiconductive material share an ohmic junction. Underbump metallurgies are formed on the contact pads. Conductive connectors are electrically coupled to the laser devices. The underbump metallurgies help prevent metal inter-diffusion between the contact pads and conductive connectors. As such, when reflowing the conductive connectors, the junction of the contact pads and semiconductive material may retain its ohmic properties.
Claims20
A device comprising:
- a first reflective structure comprising first doped layers of a semiconductive material, alternating ones of the first doped layers being doped with a p-type dopant;
- a second reflective structure comprising second doped layers of the semiconductive material, alternating ones of the second doped layers being doped with an n-type dopant;
- an emitting semiconductor region disposed between the first reflective structure and the second reflective structure;
- a contact pad on the second reflective structure, a work function of the contact pad being less than a work function of the second reflective structure;
- a bonding layer on the contact pad, a work function of the bonding layer being greater than the work function of the second reflective structure;
- a conductive connector on the bonding layer;
- an interconnect structure comprising a first pad and a second pad, the conductive connector physically contacting the first pad;
- a conductive via physically contacting the second pad;
- an isolation material surrounding the conductive via, the first reflective structure, and the second reflective structure;
- an electrode on and extending through the isolation material, the electrode connecting the conductive via to the first reflective structure;
- and
- a first passivation layer physically contacting a sidewall of the conductive connector, the isolation material being disposed on the first passivation layer.
A device comprising:
- a laser device comprising:
- a laser diode comprising an anode and a cathode;
- a contact pad on the cathode of the laser diode;
- and
- an underbump metallurgy on the contact pad;
- a conductive connector connecting the underbump metallurgy of the laser device to a first pad of a substrate;
- a first passivation layer physically contacting a sidewall of the conductive connector and a sidewall of the laser device;
- an isolation material on the first passivation layer;
- a conductive via extending through the isolation material and the first passivation layer, the conductive via physically contacting a second pad of the substrate;
- and
- an electrode connecting the conductive via to the anode of the laser diode.
A device comprising:
- a diode comprising an anode and a cathode;
- an electrode comprising a metal layer physically contacting the anode of the diode, the electrode and the anode sharing an ohmic junction;
- a conductive via physically contacting the metal layer of the electrode and a first pad of an interconnect structure;
- a contact pad physically contacting the cathode of the diode, the contact pad and the cathode sharing an ohmic junction;
- a underbump metallurgy physically contacting the contact pad, the underbump metallurgy and the contact pad sharing a metal-metal junction;
- a conductive connector physically contacting the underbump metallurgy and a second pad of the interconnect structure;
- a first passivation layer physically contacting a sidewall of the conductive connector and a sidewall of the underbump metallurgy;
- and
- an isolation material on the first passivation layer, the conductive via extending through the isolation material and the first passivation layer.
Dependencies are inferred from the claim text.