Method of manufacturing semiconductor device including passivation layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJing-Cheng Lin, Li-Hui Cheng, Po-Hao Tsai
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Abstract
A method of manufacturing a semiconductor device includes following operations. A substrate is received. An electrical conductor is formed over a surface of the substrate. A photo-curable material is selectively dispensed over the surface of the substrate. The photo-curable material is irradiated to form a passivation layer is formed over the surface of the substrate. The passivation layer partially covers an edge of the electrical conductor.
Claims20
A method of manufacturing a semiconductor device, comprising:
- receiving a substrate;
- forming an electrical conductor over a surface of the substrate, wherein the electrical conductor comprises a first portion through the substrate, and a second portion over the surface of the substrate and connected to the first portion;
- selectively dispensing a photo-curable material over the surface of the substrate;
- and
- irradiating the photo-curable material to form a passivation layer over the surface of the substrate, wherein a top surface of the second portion of the electrical conductor is entirely exposed through the passivation layer,
- wherein the passivation layer includes a first part covering a sidewall of the second portion of the electrical conductor, a second part covering the surface of the substrate and separated from the electrical conductor by the first part, and the first part and the second part are connected to each other with a slanted surface or a curved surface.
A method of manufacturing a semiconductor device, comprising:
- receiving a substrate having at least a through hole penetrating the substrate;
- forming an electrical conductor in the through hole and over a surface of the substrate;
- forming a conductive bump over the electrical conductor;
- selectively dispensing a photo-curable material over the surface of the substrate after the forming of the conductive bump;
- and
- irradiating the photo-curable material to form a passivation layer over the surface of the substrate, wherein the passivation layer partially covers an edge of the electrical conductor, and the conductive bump is separated from the passivation layer.
A method of manufacturing a semiconductor device, comprising:
- receiving a substrate having at least a through hole penetrating the substrate;
- forming a first portion of an electrical conductor in the through hole;
- forming a second portion of the electrical conductor over a first surface of the substrate after the forming of the first portion;
- forming a conductive bump over the second portion of the electrical conductor;
- selectively dispensing a photo-curable material over the first surface of the substrate;
- and
- irradiating the photo-curable material to form a passivation layer over the first surface of the substrate,
- wherein the passivation layer is separated from the conductive bump,
- wherein the passivation layer comprises:
- a first part covering a sidewall of the electrical conductor;
- and
- a second part covering the first surface of the substrate and separated from the electric conductor by the first part,
- wherein a height of the first part is greater than a height of the second part.
Dependencies are inferred from the claim text.