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US 12,368,071 B2Granted
Semiconductor device and method for fabricating the same
AssigneeSK hynix Inc.
InventorByung Ho Lee
Life of this patent
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Abstract
A semiconductor device includes: a semiconductor layer, a gate insulating layer, and a gate electrode sequentially formed in a trench formed to a predetermined depth from a first surface of a first substrate; a third substrate bonded to a second surface opposite to the first surface of the first substrate; and an air gap interposed between the semiconductor layer and the first substrate and between the semiconductor layer and the third substrate.
Claims16
A method for fabricating a semiconductor device, comprising:
- forming a trench in a first substrate to a predetermined depth from a first surface of the first substrate;
- forming a sacrificial layer along a surface of the trench;
- sequentially forming a semiconductor layer, a gate insulating layer, and a gate electrode in the trench;
- forming an insulating layer over the first surface of the first substrate;
- bonding the insulating layer to a second substrate;
- thinning the first substrate from a second surface opposite to the first surface of the first substrate to expose the sacrificial layer;
- forming an air gap by removing the sacrificial layer;
- bonding the thinned surface of the first substrate to a third substrate;
- and
- removing the second substrate.
7 more elements
Dependencies are inferred from the claim text.