US 12,368,034 B2Granted

Support body, manufacturing apparatus for support body, and manufacturing method for support body

AssigneesKeio University, Ibaraki University, National Institute for Materials, Ayabo Corporation

InventorsAtsushi Nakajima, Hironori Tsunoyama, Mika Uno, Hiroyuki Gunji, Toshihiro Ando, Keizo Tsukamoto, Masahide Tona, Naoyuki Hirata

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Abstract

Nanoclusters are produced in a gas phase using a nanocluster manufacturing section including: a vacuum container; a sputtering source that has a target as a cathode, performs magnetron sputtering by pulse discharge, and generates plasma; a pulse power source that supplies pulsed power to the sputtering source; a first inert gas supply section that supplies a first inert gas to the sputtering source; a nanocluster growth cell that is contained in the vacuum container; and a second inert gas introduction section that introduces a second inert gas into the nanocluster growth cell. A multitude of supports are rolled in the gas phase and each of the supports is sprinkled with a multitude of nanoclusters to cause each support to support the multitude of nanoclusters.

Claims12

Dependent claims

A manufacturing apparatus for support bodies in which nanoclusters are supported on each of supports in the form of fine particles, the manufacturing apparatus comprising:

a nanocluster manufacturing section configured to produce the nanoclusters in a gaseous atmosphere;
a support manufacturing unit for producing the supports in the gaseous atmosphere;
an activation mechanism configured to perform activation treatment on the supports, the activation treatment carrying out at least one of producing fixation sites on each of the supports and enhancing an activity of the fixation sites of each of the supports for fixing the nanoclusters to the supports;
and
a supporting mechanism configured to cause each of the supports to support the nanoclusters in the gaseous atmosphere;
wherein the nanocluster manufacturing section includes:
a vacuum container;
a sputtering source that has a target as a cathode, performs magnetron sputtering by pulse discharge, and generates plasma;
a pulse power source that supplies pulsed power to the sputtering source;
a first inert gas supply section that supplies a first inert gas to the sputtering source;
a nanocluster growth cell that is contained in the vacuum container;
and
a second inert gas introduction section that introduces a second inert gas into the nanocluster growth cell,
wherein the supporting mechanism includes a container configured to contain the supports and the nanoclusters, and
wherein the supporting mechanism is configured to rotate the container or use one or more stirrers to roll, in the gaseous atmosphere, the supports and to sprinkle, in the gaseous atmosphere, each of the supports with the nanoclusters to cause each of the supports to support the nanoclusters.

12 more elements

A manufacturing method for support bodies in which nanoclusters are supported on each of supports, the manufacturing method comprising:

a first process of producing the nanoclusters in a gaseous atmosphere;
a process of performing activation treatment on the supports, the activation treatment carrying out at least one of producing fixation sites on each of the supports and enhancing an activity of the fixation sites of each of the supports for fixing the nanoclusters to the supports;
and
a second process of causing each of the supports to support the nanoclusters in the gaseous atmosphere, and
a third process of producing the supports, wherein in the second process, the support produced in the third process are used in the gaseous atmosphere, wherein
in the first process, the nanoclusters are produced using an apparatus including:
a vacuum container;
a sputtering source that has a target as a cathode, performs magnetron sputtering by pulse discharge, and generates plasma;
a pulse power source that supplies pulsed power to the sputtering source;
a first inert gas supply section that supplies a first inert gas to the sputtering source;
a nanocluster growth cell that is contained in the vacuum container;
and a second inert gas introduction section that introduces a second inert gas into the nanocluster growth cell, and
in the second process, a container configured to contain the supports and the nanoclusters is rotated or one or more stirrers are used to roll, in the gaseous atmosphere, the supports and to sprinkle, in the gaseous atmosphere, each of the supports with the nanoclusters to cause each of the supports to support the nanoclusters.

10 more elements

Dependencies are inferred from the claim text.

Facts

Application: 18/008,459Filed 8 Jun 2021
Priority: JP 2020-0996698 Jun 2020
Published: US 2023/0203642 A129 Jun 2023
Granted: 22 Jul 2025
Term ends: Not estimatedThe source records don’t support an estimate.

Classification25 codes

C23C 14/221
Characterised by the process of coating: ion beam deposition
H01J 37/3467
Operating strategies: pulsed operation, e.g. HIPIMS
C23C 14/18
Metallic material, boron or silicon: on other inorganic substrates
C23C 14/223
Characterised by the process of coating: specially adapted for coating particles