Polycrystalline SiC compact and method for manufacturing the same
AssigneeTokai Carbon Co., Ltd.
InventorsYohei Harada, Junya Oishi
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Abstract
Provided are a polycrystalline SiC compact capable of achieving uniform plasma etching when used as electrodes and a method for manufacturing the same. A polycrystalline SiC compact has a major surface in which Wa (0 to 10 mm) is 0.00 to 0.05 μm or less, Wa (10 to 20 mm) is 0.13 μm or less, and Wa (20 to 30 mm) is 0.20 μm or less.
Claims7
A polycrystalline SiC compact having two opposed major surfaces, wherein an arithmetic mean waviness Wa for a predetermined wavelength range extracted from a primary profile of each of the major surfaces is such that the Wa is 0.05 μm or less when the wavelength range is 0 to 10 mm, is 0.13 μm or less when the wavelength range is 10 to 20 mm, and is 0.20 μm or less when the wavelength range is 20 to 30 mm.
Dependencies are inferred from the claim text.