Photonic element for a quantum information processing device and method for producing such
AssigneeMax-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
InventorsAndreas Reiserer, Andreas Gritsch, Lorenz Weiss
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Abstract
A photonic element for a quantum information processing device contains a high-purity silicon layer. The high-purity silicon layer contains integrated rare-earth element (REE) dopants at a concentration of 1019 cm−3 or less. An optical transition between the lowest crystal field levels of the REE dopants integrated in the high-purity silicon layer exhibits a homogeneous linewidth of 1 MHz or less at a temperature of 4 K or less. A method for producing such a photonic element is also disclosed.
Claims51
A photonic element for a quantum information processing device, the photonic element comprising:
- a high-purity silicon layer,
- wherein the high-purity silicon layer contains integrated rare-earth element (REE) dopants at a concentration of 1019 cm−3 or less, and
- wherein an optical transition between lowest crystal field levels of the REE dopants integrated in the high-purity silicon layer exhibits a homogeneous linewidth of 1 MHz or less at a temperature of 4 K or less corresponding to a coherence time of 318 ns or less.
A method for producing a photonic element for a quantum information processing device, the method comprising:
- providing a high-purity silicon layer;
- and
- integrating rare-earth element (REE) dopants into the high-purity silicon layer, such that the high-purity silicon layer contains the integrated REE dopants at a concentration of 1·1019 cm−3 or less, and wherein an optical transition between lowest crystal field levels of the REE dopants integrated in the high-purity silicon layer exhibits a homogeneous linewidth of 1 MHz or less at a temperature of 4 K or less corresponding to a coherence time of 318 ns or less.
Dependencies are inferred from the claim text.