Hybrid metrology method and system

A system for use in measuring one or more characteristics of patterned structures on a semiconductor wafer during manufacturing, the system comprising:

• an optical measurement system configured and operable to
• perform optical measurements on a patterned structure using at least two optical measurement schemes including Raman Spectroscopy and Optical Critical Dimension metrology, wherein said Raman Spectroscopy metrology optical measurement scheme is configured for collection of optical signals using different excitation wavelengths, and
• generate measured data indicative of spectral responses of the patterned structure comprising at least one Raman spectrum and at least one Optical Critical Dimension spectrum;
• and
• a control system configured for data communication with the optical measurement system to receive and process the measured data to determine the one or more characteristics of the patterned structure by modeling electromagnetic interaction with the patterned structure, wherein the control system is configured to utilize at least a portion of a calculation engine to perform the modeling using the at least one Raman spectrum and utilize the same portion to perform the modeling using the at least one Optical Critical Dimension spectrum.