Piezoelectric bulk layers with tilted c-axis orientation and methods for making the same

A structure comprising:

• a substrate comprising a wafer or a portion thereof;
• and
• a piezoelectric bulk material layer comprising a first portion deposited onto the substrate at an off-normal angle of incidence to achieve a desired c-axis tilt and a second portion deposited onto the first portion at normal incidence,
• wherein the first portion has a first bulk grain orientation and the second portion has a second bulk grain orientation, and wherein the second bulk grain orientation is different from the first bulk grain orientation.

A structure comprising:

• a substrate comprising a wafer or a portion thereof;
• and
• a piezoelectric bulk material layer comprising a first portion deposited onto the substrate at an off-normal angle of incidence to achieve a desired c-axis tilt and a second portion deposited onto the first portion at normal incidence,
• wherein the piezoelectric bulk material layer exhibits a ratio of shear coupling to longitudinal coupling of 1.25 or greater during excitation.