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US 12,364,126 B2Granted
Display device
AssigneeLG Display Co., Ltd.
InventorsSo Young Noh, Kyeong Ju Moon
Life of this patent
Estimating the term…
Abstract
A display device includes a substrate, first thin film transistors and second thin film transistors. A gate line is formed integrally with a first gate electrode of the first thin film transistors. An isolation insulating layer is disposed over a first gate insulating layer of the first thin film transistors. A second active layer of the second thin film transistors is disposed on the isolation insulating layer. An overlap pattern is disposed on the isolation insulating layer to be connected to the gate line. The overlap pattern includes a first overlap pattern disposed on the isolation insulating layer and formed of substantially the same material as the second active layer. A second overlap pattern is disposed on the first overlap pattern.
Claims20
A display device, comprising:
- a substrate having an active area and a non-active area;
- a light emitting device in the active area, the light emitting device having an anode, a cathode, and a light emission stack;
- first thin film transistors, each of the first thin film transistors including:
- a first active layer disposed in the active area,
- a first gate insulating layer disposed on the first active layer,
- a first gate electrode disposed on the first gate insulating layer and disposed to overlap the first active layer,
- a first interlayer insulating layer provided on the first gate electrode, and
- a first source electrode and a first drain electrode, each of the first source electrode and the first drain electrode connected to the first active layer;
- a gate line formed integrally with the first gate electrode;
- an isolation insulating layer disposed on the first interlayer insulating layer;
- second thin film transistors disposed in the active area, each of the second thin film transistors including:
- a second active layer disposed on the isolation insulating layer,
- a second gate insulating layer disposed on the second active layer,
- a second gate electrode disposed on the second gate insulating layer and disposed to overlap the second active layer,
- a second interlayer insulating layer provided on the second gate insulating layer and the second gate electrode, and
- a second source electrode and a second drain electrode, each of the second source electrode and the second drain electrode connected to the second active layer;
- and
- an overlap pattern positioned to overlap the gate line and being connected to the gate line, the overlap pattern disposed on the isolation insulating layer and positioned under the anode, the overlap pattern including:
- a first overlap pattern disposed on the isolation insulating layer and formed of substantially the same material as the second active layer;
- and
- a second overlap pattern disposed on the first overlap pattern,
- wherein the first overlap pattern and the second overlap pattern are distinct and different structures from each other and
- wherein the first overlap pattern comprises an oxide semiconductor of different material from the first active layer.
20 more elements
A display device, comprising:
- a substrate having an active area and a non-active area;
- a light emitting device in the active area, the light emitting device having an anode, a cathode and a light emission stack;
- first thin film transistors at the active area, each of the first thin film transistors including:
- a first active layer on the substrate,
- a first gate insulating layer on the first active layer,
- a first gate electrode on the first gate insulating layer and to overlap the first active layer,
- a first interlayer insulating layer provided on the first gate electrode, and
- a first source electrode and a first drain electrode, respectively connected to the first active layer;
- a gate line integrally with the first gate electrode;
- an isolation insulating layer on the first interlayer insulating layer;
- second thin film transistors at the active area, each of the second thin film transistors including:
- a second active layer on the isolation insulating layer,
- a second gate insulating layer on the second active layer,
- a second gate electrode on the second gate insulating layer and to overlap the second active layer, and
- a second source electrode and a second drain electrode, respectively connected to the second active layer;
- and
- an overlap pattern positioned to overlap the gate line and be positioned under the anode,
- wherein the overlap pattern is disposed on the isolation insulating layer and connected to the gate line through a contact hole in the isolation insulating layer and the first interlayer insulating layer,
- wherein the overlap pattern includes a first overlap pattern disposed on the isolation insulating layer and a second overlap pattern disposed on the first overlap pattern,
- wherein the first overlap pattern is made of a first material and the second overlap pattern is made of a second material that is different from the first material, and
- wherein the first overlap pattern comprises an oxide semiconductor of different material from the first active layer.
18 more elements
Dependencies are inferred from the claim text.