Semiconductor device and manufacturing method thereof

A semiconductor device comprising:

• a first pixel in a first row comprising:
• a first transistor;
• and
• a first photosensor electrically connected to the first transistor;
• and
• a second pixel in a second row comprising:
• a second transistor;
• and
• a second photosensor electrically connected to the second transistor,
• wherein a channel formation region of the first transistor and a channel formation region of the second transistor each comprises an oxide semiconductor comprising a crystal region,
• wherein the oxide semiconductor comprises In and Zn,
• wherein off-state current per micrometer in a channel width of the first transistor is less than or equal to 1×10−17 A/μm, and
• wherein a charge accumulation operation is performed in the first pixel and the second pixel at the same time.

A semiconductor device comprising:

• a first pixel in a first row comprising:
• a first transistor;
• and
• a first photosensor electrically connected to the first transistor;
• and
• a second pixel in a second row comprising:
• a second transistor;
• and
• a second photosensor electrically connected to the second transistor,
• wherein a channel formation region of the first transistor and a channel formation region of the second transistor each comprises an oxide semiconductor comprising a crystal region,
• wherein the oxide semiconductor comprises In, Ga, and Zn,
• wherein off-state current per micrometer in a channel width of the first transistor is less than or equal to 1×10−17 A/μm, and
• wherein a charge accumulation operation is performed in the first pixel and the second pixel at the same time.