Gated tri-state inverter, and method of operating same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTsung-Che Lu, Chin-Ming Fu, Chih-Hsien Chang
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTsung-Che Lu, Chin-Ming Fu, Chih-Hsien Chang
Estimating the term…
A gated tri-state (G3S) inverter includes: first, second and third transistors of a first dopant type (D1 transistors) and first, second and third transistors of a second dopant type (D2 transistors) serially connected between a first reference voltage and second reference voltage, the second dopant type being different than the first dopant type; gate terminals of an alpha one of the noted D1 transistors and an alpha one of the noted D2 transistors being configured to receive an input signal; gate terminals of a beta one of the noted D1 transistors and a beta one of the noted D2 transistors being configured to receive a gating signal; a gate terminal of a gamma one of the noted D2 transistors being configured to receive an enable signal; and a gate terminal of a gamma one of the noted D1 transistors being configured to receive an enable_bar signal.
A gated tri-state (G3S) inverter comprises:
A method of operating a gated tri-state (G3S) inverter, the method comprising:
A gated tri-state (G3S) inverter comprises:
Dependencies are inferred from the claim text.