Methods for incorporating a control structure within a vertical cavity surface emitting laser device cavity

A method of forming a vertical cavity surface emitting laser (VCSEL) device using a multiphase growth sequence, comprising:

• forming, using a first metal-organic chemical vapor deposition (MOCVD) process during a first MOCVD phase of the multiphase growth sequence, a first mirror over a substrate,
• wherein the first mirror is a distributed Bragg reflector (DBR);
• forming an active region over the first mirror;
• forming a spacer on a surface of the active region,
• wherein the active region and the spacer are formed using a molecular beam epitaxy (MBE) process during an MBE phase of the multiphase growth sequence;
• forming a control structure on a surface of the spacer;
• and
• forming a second mirror over the control structure,
• wherein the second mirror is formed using a second MOCVD process during a second MOCVD phase of the multiphase growth sequence,
• wherein the control structure is formed using a chemical etching process during a transition period between the MBE phase and the second MOCVD phase of the multiphase growth sequence, and
• wherein the control structure is configured to provide mode control within a cavity of the VCSEL device;
• and
• forming, during the second MOCVD phase of the multiphase growth sequence and using the MOCVD process, a dielectric layer over the second mirror.

A method of forming a vertical cavity surface emitting laser (VCSEL) device using a multiphase growth sequence, comprising:

• forming, during a first metal-organic chemical vapor deposition (MOCVD) phase of the multiphase growth sequence, a first mirror over a substrate;
• forming an active region over the first mirror;
• forming a spacer on a surface of the active region;
• forming a control structure on a surface of the spacer;
• forming a second mirror over the control structure,
• wherein the active region, the spacer, and the control structure are formed using a molecular beam epitaxy (MBE) process during an MBE phase of the multiphase growth sequence,
• wherein the second mirror is formed using an MOCVD process during a second MOCVD phase of the multiphase growth sequence,
• wherein the control structure is further formed using a chemical etching process during a transition period between the MBE phase and the second MOCVD phase of the multiphase growth sequence, and
• wherein the control structure is configured to provide optical confinement and current confinement within a cavity of the VCSEL device;
• and
• forming, during the second MOCVD phase of the multiphase growth sequence and using the MOCVD process, a dielectric layer over the second mirror.