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US 12,360,405 B2Granted
Optical semiconductor device
AssigneesDenso Corporation, Toyota Jidosha Kabushiki Kaisha, MIRISE Technologies Corporation, Qd Laser, Inc.
InventorsYuki Kamata, Hiroyuki Tarumi, Koichi Oyama, Keizo Takemasa, Kenichi Nishi, Yutaka Ohnishi
Life of this patent
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Abstract
An optical semiconductor device includes an active layer having a plurality of quantum dot layers. The plurality of quantum dot layers include: a first quantum dot layer doped with a p-type impurity; and a second quantum dot layer doped with an n-type impurity and having an emission wavelength different from that of the first quantum dot layer.
Claims17
An optical semiconductor device comprising:
- an active layer having a plurality of quantum dot layers;
- a p-type clad layer stacked on one side of the active layer;
- and
- an n-type clad layer stacked on an opposite side of the active layer, wherein
- the plurality of quantum dot layers include:
- a plurality of first quantum dot layers doped with a p-type impurity;
- and
- a plurality of second quantum dot layers doped with an n-type impurity and having an emission wavelength different from that of the first quantum dot layers,
- the plurality of first quantum dot layers is disposed closer to the p-type clad layer than the plurality of second quantum dot layers,
- the plurality of second quantum dot layers is disposed closer to the n-type clad layer than the plurality of first quantum dot layers,
- the plurality of first quantum dot layers has a p-type impurity concentration that increases as the plurality of first quantum dot layers is closer to the p-type clad layer, and
- the plurality of second quantum dot layers has an n-type impurity concentration that increases as the plurality of second quantum dot layers is closer to the n-type clad layer.
9 more elements
An optical semiconductor device comprising:
- an active layer having a plurality of quantum dot layers;
- and
- a p-type clad layer stacked on the active layer, wherein
- the plurality of quantum dot layers includes:
- a plurality of first quantum dot layers doped with a p-type impurity;
- and
- a plurality of second quantum dot layers doped with an n-type impurity and having an emission wavelength different from that of the first quantum dot layer,
- the plurality of first quantum dot layers is disposed closer to the p-type clad layer than the plurality of second quantum dot layers,
- the plurality of first quantum dot layers has an emission wavelength shorter than that of the plurality of second quantum dot layers,
- the plurality of quantum dot layers further includes a plurality of third quantum dot layers between the plurality of first quantum dot layers and the plurality of second quantum dot layers,
- a p-type impurity concentration and an n-type impurity concentration of the plurality of third quantum dot layer are both lower than those of the plurality of first quantum dot layers and the plurality of second quantum dot layers,
- the emission wavelength of the plurality of second quantum dot layers is referred to as λ2, and an emission wavelength of the plurality of third quantum dot layers is referred to as λ3, and
- the emission wavelength λ2 is smaller than the emission wavelength λ3, or
- the emission wavelength λ2 and the emission wavelength λ3 form a unimodal gain spectrum in a gain spectrum of the active layer.
11 more elements
Dependencies are inferred from the claim text.