Multilevel semiconductor device and structure with oxide bonding
AssigneeMonolithic 3D Inc.
InventorsZvi Or-Bach, Deepak C. Sekar, Brian Cronquist
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Abstract
A multi-level semiconductor device, the device comprising: a first level comprising integrated circuits; a second level comprising at least one electromagnetic wave receiver, wherein said second level is disposed above said first level, wherein said integrated circuits comprise single crystal transistors; and an oxide layer disposed between said first level and said second level, wherein said device comprises at least one read out circuit, wherein said second level is bonded to said oxide layer, and wherein said bonded comprises oxide to oxide bonds.
Claims18
A multi-level semiconductor device, the device comprising:
- a first level comprising integrated circuits;
- a second level comprising at least one electromagnetic wave receiver,
- wherein said second level is disposed above said first level,
- wherein said integrated circuits comprise single crystal transistors;
- an oxide layer disposed between said first level and said second level,
- wherein said device comprises at least one read out circuit,
- wherein said second level is bonded to said oxide layer, and
- wherein said bonded comprises oxide to oxide bonds;
- and
- an electromagnetic wave transmitter,
- wherein said transmitter comprises at least one modulator.
A multi-level semiconductor device, the device comprising:
- a first level comprising at least one electromagnetic wave receiver;
- a second level comprising integrated circuits,
- wherein said second level is disposed above said first level,
- wherein said integrated circuits comprise single crystal transistors;
- an oxide layer disposed between said first level and said second level,
- wherein said device comprises at least one read out circuit,
- wherein said second level is bonded to said oxide layer, and
- wherein said bonded comprises oxide to oxide bonds;
- and
- at least one electromagnetic wave transmitter,
- wherein said transmitter comprises at least one modulator.
A multi-level semiconductor device, the device comprising:
- a first level comprising integrated circuits and communication control circuits;
- a second level comprising a plurality of interconnect lines,
- wherein said second level is disposed above said first level,
- wherein said plurality of interconnect lines is designed to conduct electromagnetic waves,
- wherein said first level comprises a crystalline material;
- and
- an oxide layer disposed between said first level and said second level,
- wherein said second level is bonded to said oxide layer,
- wherein said bonded comprises oxide to oxide bonds;
- and
- wherein said integrated circuits comprise at least one memory circuit or at least one processor circuit.
Dependencies are inferred from the claim text.