High-sensitivity magnetoresistive acoustic wave sensor and array device

A magnetoresistive acoustic wave sensor with high sensitivity, comprising:

• a protective tube shell;
• a magnetic vibration assembly;
• and
• a magnetoresistive chip located inside the protective tube shell,
• wherein
• the protective tube shell comprises at least one opening which is covered by the magnetic vibration assembly;
• the magnetic vibration assembly is configured to receive an external acoustic wave signal and convert the acoustic wave signal into a magnetic signal about a magnetic field variation;
• the magnetoresistive chip is configured to sense the magnetic field variation, convert the magnetic field variation into a magnetoresistive resistance value variation and perform signal output;
• a plane where the magnetoresistive chip is located is perpendicular to a plane where the magnetic vibration assembly is located, and a sensing direction of the magnetoresistive chip is located in the plane where the magnetoresistive chip is located, and is perpendicular to or parallel to the plane where the magnetic vibration assembly is located;
• alternatively, the plane where the magnetoresistive chip is located is parallel to the plane where the magnetic vibration assembly is located, and the sensing direction of the magnetoresistive chip is located in the plane where the magnetoresistive chip is located, and is parallel to the plane where the magnetic vibration assembly is located,
• wherein
• the magnetic vibration assembly comprises a vibration diaphragm and a permanent magnetic material body,
• the permanent magnetic material body is a permanent magnetic material layer and is attached to a surface of the vibration diaphragm, or alternatively, the permanent magnetic material body is permanent magnetic material powder and is uniformly distributed in the vibration diaphragm, and
• the magnetizing direction of the permanent magnetic material body is perpendicular to or parallel to a plane where the vibration diaphragm is located, and
• wherein the permanent magnetic material body is a hard magnetic material or a multi-layer thin-film composite unit composed of multiple hard magnetic materials;
• alternatively, the permanent magnetic material body is a multi-layer thin-film composite material of [soft magnetic material/antiferromagnetic material]n;
• alternatively, the permanent magnetic material body is a multi-layer thin-film composite material of [soft magnetic material/hard magnetic material]p, where n and p are both natural numbers.

A magnetoresistive acoustic wave sensor with high sensitivity, comprising:

• a protective tube shell;
• a magnetic vibration assembly;
• and
• a magnetoresistive chip located inside the protective tube shell,
• wherein
• the protective tube shell comprises at least one opening which is covered by the magnetic vibration assembly;
• the magnetic vibration assembly is configured to receive an external acoustic wave signal and convert the acoustic wave signal into a magnetic signal about a magnetic field variation;
• the magnetoresistive chip is configured to sense the magnetic field variation, convert the magnetic field variation into a magnetoresistive resistance value variation and perform signal output;
• a plane where the magnetoresistive chip is located is perpendicular to a plane where the magnetic vibration assembly is located, and a sensing direction of the magnetoresistive chip is located in the plane where the magnetoresistive chip is located, and is perpendicular to or parallel to the plane where the magnetic vibration assembly is located;
• alternatively, the plane where the magnetoresistive chip is located is parallel to the plane where the magnetic vibration assembly is located, and the sensing direction of the magnetoresistive chip is located in the plane where the magnetoresistive chip is located, and is parallel to the plane where the magnetic vibration assembly is located,
• wherein
• the magnetic vibration assembly comprises a vibration diaphragm and a permanent magnetic material body,
• the permanent magnetic material body is a permanent magnetic material layer and is attached to a surface of the vibration diaphragm, or alternatively, the permanent magnetic material body is permanent magnetic material powder and is uniformly distributed in the vibration diaphragm, and
• the magnetizing direction of the permanent magnetic material body is perpendicular to or parallel to a plane where the vibration diaphragm is located, and
• wherein the magnetic vibration assembly further comprises a protective layer located on a surface of the vibration diaphragm away from the permanent magnetic material layer.

A magnetoresistive acoustic wave sensor with high sensitivity, comprising:

• a protective tube shell;
• a magnetic vibration assembly;
• and
• a magnetoresistive chip located inside the protective tube shell,
• wherein
• the protective tube shell comprises at least one opening which is covered by the magnetic vibration assembly;
• the magnetic vibration assembly is configured to receive an external acoustic wave signal and convert the acoustic wave signal into a magnetic signal about a magnetic field variation;
• the magnetoresistive chip is configured to sense the magnetic field variation, convert the magnetic field variation into a magnetoresistive resistance value variation and perform signal output;
• a plane where the magnetoresistive chip is located is perpendicular to a plane where the magnetic vibration assembly is located, and a sensing direction of the magnetoresistive chip is located in the plane where the magnetoresistive chip is located, and is perpendicular to or parallel to the plane where the magnetic vibration assembly is located;
• alternatively, the plane where the magnetoresistive chip is located is parallel to the plane where the magnetic vibration assembly is located, and the sensing direction of the magnetoresistive chip is located in the plane where the magnetoresistive chip is located, and is parallel to the plane where the magnetic vibration assembly is located,
• wherein
• the magnetic vibration assembly comprises a vibration diaphragm and a permanent magnetic material body,
• the permanent magnetic material body is a permanent magnetic material layer and is attached to a surface of the vibration diaphragm, or alternatively, the permanent magnetic material body is permanent magnetic material powder and is uniformly distributed in the vibration diaphragm, and
• the magnetizing direction of the permanent magnetic material body is perpendicular to or parallel to a plane where the vibration diaphragm is located, and
• wherein composition materials of the vibration diaphragm in the magnetic vibration assembly comprise a high-molecular polymer, metal, silicon, or a silicon compound.

A magnetoresistive acoustic wave sensor with high sensitivity, comprising:

• a protective tube shell;
• a magnetic vibration assembly;
• and
• a magnetoresistive chip located inside the protective tube shell,
• wherein
• the protective tube shell comprises at least one opening which is covered by the magnetic vibration assembly;
• the magnetic vibration assembly is configured to receive an external acoustic wave signal and convert the acoustic wave signal into a magnetic signal about a magnetic field variation;
• the magnetoresistive chip is configured to sense the magnetic field variation, convert the magnetic field variation into a magnetoresistive resistance value variation and perform signal output;
• a plane where the magnetoresistive chip is located is perpendicular to a plane where the magnetic vibration assembly is located, and a sensing direction of the magnetoresistive chip is located in the plane where the magnetoresistive chip is located, and is perpendicular to or parallel to the plane where the magnetic vibration assembly is located;
• alternatively, the plane where the magnetoresistive chip is located is parallel to the plane where the magnetic vibration assembly is located, and the sensing direction of the magnetoresistive chip is located in the plane where the magnetoresistive chip is located, and is parallel to the plane where the magnetic vibration assembly is located,
• further comprising a signal processing unit, a data transmission unit, a power supply unit and a circuit board, wherein
• the signal processing unit, the data transmission unit, the power supply unit and the magnetoresistive chip are all electrically connected to the circuit board;
• the signal processing unit is configured to process an output signal of the magnetoresistive chip;
• the data transmission unit is configured to transmit an output signal of the magnetoresistive chip and/or a signal processed by the signal processing unit;
• the power supply unit is configured to supply power to the signal processing unit, the data transmission unit and the magnetoresistive chip;
• and
• the circuit board is configured to carry the signal processing unit, the data transmission unit and the magnetoresistive chip.

An array device of a magnetoresistive acoustic wave sensor with high sensitivity, comprising a plurality of magnetoresistive acoustic wave sensors with high sensitivity, which are arranged in an array in any plane or in an array in any spherical plane, wherein each of the plurality of magnetoresistive acoustic wave sensors include:

• a protective tube shell;
• a magnetic vibration assembly;
• and
• a magnetoresistive chip located inside the protective tube shell,
• wherein
• the protective tube shell comprises at least one opening which is covered by the magnetic vibration assembly;
• the magnetic vibration assembly is configured to receive an external acoustic wave signal and convert the acoustic wave signal into a magnetic signal about a magnetic field variation;
• the magnetoresistive chip is configured to sense the magnetic field variation, convert the magnetic field variation into a magnetoresistive resistance value variation and perform signal output;
• and
• a plane where the magnetoresistive chip is located is perpendicular to a plane where the magnetic vibration assembly is located, and a sensing direction of the magnetoresistive chip is located in the plane where the magnetoresistive chip is located, and is perpendicular to or parallel to the plane where the magnetic vibration assembly is located;
• alternatively, the plane where the magnetoresistive chip is located is parallel to the plane where the magnetic vibration assembly is located, and the sensing direction of the magnetoresistive chip is located in the plane where the magnetoresistive chip is located, and is parallel to the plane where the magnetic vibration assembly is located.