Semiconductor die with pressure and acceleration sensor elements
AssigneeInfineon Technologies Dresden GmbH
InventorsSteffen Bieselt, Dirk Meinhold
Life of this patent
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Abstract
In some implementations a semiconductor die comprises a semiconductor chip. The semiconductor chip comprises a piezoresistive pressure sensor element and at least one capacitive acceleration sensor element. The piezoresistive pressure sensor element is arranged to the side of the capacitive acceleration sensor element. In some implementations, a method for producing a semiconductor die includes applying an insulation layer to the semiconductor wafer. A section of the monocrystalline cover layer may be exposed by structuring the insulation layer. A semiconductor layer having a monocrystalline section and a polycrystalline section may be generated by deposition of a semiconductor material.
Claims22
A semiconductor die comprising:
- a semiconductor chip, wherein the semiconductor chip comprises:
- a semiconductor substrate having a monocrystalline cover layer;
- a monocrystalline section including a monocrystalline semiconductor layer extending from the monocrystalline cover layer;
- a polycrystalline section arranged on the monocrystalline cover layer, the monocrystalline section including an insulation layer arranged on the monocrystalline cover layer, and a polycrystalline semiconductor layer arranged on the insulation layer;
- a piezoresistive pressure sensor element formed by the monocrystalline semiconductor layer, wherein the piezoresistive pressure sensor element comprises a buried cavity that is buried within the monocrystalline semiconductor layer such that the buried cavity is completely surrounded by the monocrystalline semiconductor layer;
- and
- a plurality of capacitive acceleration sensor elements configured to measure an acceleration in three spatial directions and about an axis, each capacitive acceleration sensor element, of the plurality of capacitive acceleration sensor elements, comprising a respective movable acceleration mass formed by the polycrystalline semiconductor layer,
- wherein the respective movable acceleration mass of each capacitive acceleration sensor element, comprises a plurality of projections configured to prevent the respective movable acceleration mass from adhering to a sensor surface associated with the capacitive acceleration sensor element, and
- wherein the piezoresistive pressure sensor element is arranged to a side of the plurality of capacitive acceleration sensor elements.
A semiconductor chip comprising:
- a semiconductor substrate having a monocrystalline cover layer;
- a monocrystalline section including a monocrystalline semiconductor layer extending from the monocrystalline cover layer;
- a polycrystalline section arranged on the monocrystalline cover layer, the monocrystalline section including an insulation layer arranged on the monocrystalline cover layer, and a polycrystalline semiconductor layer arranged on the insulation layer;
- a piezoresistive pressure sensor element formed by the monocrystalline semiconductor layer, wherein the piezoresistive pressure sensor element comprises a buried cavity that is buried within the monocrystalline semiconductor layer such that the buried cavity is completely surrounded on all sides by the monocrystalline semiconductor layer;
- and
- a plurality of capacitive acceleration sensor elements configured to measure an acceleration in three spatial directions and about an axis, each capacitive acceleration sensor, of the plurality of capacitive acceleration sensor elements, comprising a respective movable acceleration mass formed by the polycrystalline semiconductor layer,
- wherein the respective movable acceleration mass of each capacitive acceleration sensor element comprises a plurality of projections configured to prevent the respective movable acceleration mass from adhering to a sensor surface associated with the capacitive acceleration sensor element,
- wherein each sensor surface is arranged on the insulation layer, between the insulation layer and a respective movable acceleration mass, and
- wherein the piezoresistive pressure sensor element is arranged to a side of the plurality of capacitive acceleration sensor elements.
Dependencies are inferred from the claim text.