Back to results
US 12,359,344 B2Granted
Silicon carbide powder and method for manufacturing silicon carbide ingot using the same
AssigneeSenic Inc.
InventorsJong Hwi Park, Kap Ryeol Ku, Jung Gyu Kim, Jung Woo Choi, Jung Doo Seo, Myung Ok Kyun
Life of this patent
Estimating the term…
Abstract
Disclosed are a silicon carbide powder and a method of manufacturing a silicon carbide ingot using the same. More particularly, the silicon carbide powder includes carbon and silicon and has a particle circularity of 0.4 to 0.9 measured through 2D image analysis.
Claims9
A silicon carbide powder, comprising carbon and silicon,
- wherein a particle circularity measured through 2D image analysis is 0.4 to 0.9,
- wherein a particle curvature measured through the 2D image analysis is 0.8 to 0.99,
- wherein a particle elongation measured through the 2D image analysis is 0.7 to 0.95, and
- wherein an equivalent circle diameter measured through the 2D image analysis is 150 μm to 3 mm.
1 more element
A method of manufacturing a silicon carbide wafer, the method comprising:
- preparing a silicon carbide powder comprising a silicon carbide powder carbon and silicon and having a particle circularity of 0.4 to 0.9 measured through 2D image analysis;
- growing a silicon carbide ingot using the silicon carbide powder;
- and
- processing the silicon carbide ingot,
- wherein a particle curvature measured through the 2D image analysis is 0.8 to 0.99,
- wherein a particle elongation measured through the 2D image analysis is 0.7 to 0.95, and
- wherein an equivalent circle diameter measured through the 2D image analysis is 150 μm to 3 mm.
4 more elements
Dependencies are inferred from the claim text.