Back to results
US 12,359,343 B2Granted
Wafer with regions of low oxygen concentration
AssigneeBlue Origin Manufacturing, LLC
InventorsJesse S. Appel, Alison Greenlee, Nathan Stoddard, Peter Kellerman, Parthiv Daggolu, Alexander Martinez, Saeed Pirooz
Life of this patent
Estimating the term…
Abstract
A single crystal silicon wafer has a thickness between a first surface and an opposite second surface from 50 μm to 300 μm. The wafer includes a first region extending a first depth from the first surface. The first region has a reduced oxygen concentration relative to an adjacent region of the wafer. The wafer has a bulk minority carrier lifetime greater than 100 μs.
Claims18
A semiconductor material comprising:
- a single crystal silicon ribbon floating on molten silicon, wherein
- the single crystal silicon ribbon has a thickness between a first surface and a second surface from 50 μm to 300 μm,
- the first surface and the second surface are opposite each other,
- the single crystal silicon ribbon includes a first region extending a first depth from the first surface toward the second surface,
- the first region has a reduced oxygen concentration relative to a bulk region of the single crystal silicon ribbon, and
- the single crystal silicon ribbon has a bulk minority carrier lifetime greater than 100 μs.
3 more elements
Dependencies are inferred from the claim text.