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US 12,359,308 B2Granted
Film forming method and semiconductor production apparatus
AssigneeTokyo Electron Limited
InventorsYusuke Suzuki, Tsuyoshi Moriya, Kazuhide Hasebe, Atsushi Endo, Satoshi Tanaka
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Abstract
A film forming method is provided. In the film forming method, a mask is prepared based on a measurement result of a surface state of a substrate. The mask is transferred into a process chamber and the substrate is transferred into the process chamber. Then, a film is formed on a back surface of the substrate while the mask is disposed onto the back surface of the substrate.
Claims10
A film forming method comprising:
- preparing a substrate which has at least one layer formed on a front surface thereof;
- measuring a layer thickness of the at least one layer of the substrate, the layer thickness being determined by measuring a height of the at least one layer;
- preparing a mask which has a same shape and a same size as those of the substrate;
- forming one or more holes at one or more portions of the mask corresponding to one or more desired film formation portions on a back surface of the substrate, based on a measurement result of a surface state of the substrate which includes the layer thickness, the measurement result indicating the height of the layer for each horizontal (x, y) coordinate on the substrate, to create the mask having a pattern formed by the one or more holes, the pattern of the mask corresponding to the substrate whose surface state is measured;
- transferring the mask into a process chamber;
- transferring the substrate into the process chamber;
- and
- forming a film on the back surface of the substrate with the pattern while the mask is disposed onto the back surface of the substrate.
5 more elements
Dependencies are inferred from the claim text.