A film deposition method of depositing a film on a substrate mounted on a rotary table in a film deposition apparatus including:
- a vacuum chamber;
- the rotary table provided in the vacuum chamber, and configured to mount a plurality of substrates along a circumferential direction;
- and
- a first processing region, a separation region, and a second processing region provided in this order from an upstream side to a downstream side in a rotation direction of the rotary table,
- wherein a first process gas supply and a first exhaust port are provided in the first processing region, the first process gas supply being configured to supply a first process gas to the substrate, and the first exhaust port being configured to exhaust the first process gas supplied to the substrate,
- wherein a second process gas supply and a second exhaust port are provided in the second processing region, the second process gas supply being configured to supply a second process gas to the substrate, the second exhaust port being configured to exhaust the second process gas supplied to the substrate,
- wherein a separation gas supply and a third exhaust port are provided in the separation region, the separation gas supply being configured to supply a separation gas to separate the first process gas supplied to the first processing region and the second process gas supplied to the second processing region from each other, and the third exhaust port being configured to exhaust the separation gas supplied to the separation region,
- wherein the separation gas supply includes a first discharge port, a second discharge port, a third discharge port, a fourth discharge port, and a supply controller,
- wherein the first discharge port and the second discharge port are provided such that the third exhaust port is interposed between the first discharge port and the second discharge port in the circumferential direction of the rotary table, and the separation gas is discharged from the first discharge port and the second discharge port,
- wherein the third discharge port is provided between the first discharge port and the third exhaust port in the circumferential direction of the rotary table, and the separation gas is discharged from the third discharge port,
- wherein the fourth discharge port is provided between the third exhaust port and the second discharge port in the circumferential direction of the rotary table, and the separation gas is discharged from the fourth discharge port,
- wherein the supply controller is configured to control the supplying and stopping of the separation gas to be discharged from the first discharge port, the second discharge port, the third discharge port, and the fourth discharge port,
- wherein the first discharge port, the third exhaust port, and the second discharge port are provided in this order from the upstream side to the downstream side in the rotation direction of the rotary table,
- wherein an exhaust conductance from the first discharge port to the third exhaust port is less than an exhaust conductance from the first discharge port to a first end of the separation region, the first end being close to the first processing region, and
- wherein an exhaust conductance from the second discharge port to the third exhaust port is less than an exhaust conductance from the second discharge port to a second end of the separation region, the second end being close to the second processing region, the film deposition method comprising controlling the supply controller according to a condition of the depositing of the film to change a position to which the separation gas is supplied.