Method for cleaning substrate

A method for cleaning a substrate, comprising:

• receiving a substrate with a first layer over a surface of the substrate and a second layer over the first layer, wherein a plurality of conductive nanoparticles are disposed over a surface of first layer;
• performing a first sonic agitation with applying a first mixture comprising an SC1 solution, deionized (DI) water, and ozone (O3) on the surface of the substrate, the surface of the first layer and the second layer, wherein a temperature of the first mixture is between approximately 20° C. and 40° C.;
• performing a spin after the first sonic agitation and the applying of the first mixture;
• performing a second sonic agitation with applying a second mixture comprising DI water and H2 on the surface of the substrate, the surface of the first layer and the second layer;
• applying a DI water to rinse the surface of the substrate, the surface of the first layer and the second layer;
• and
• performing a spin after the applying of the DI water,
• wherein a frequency of the first sonic agitation is greater than 3 MHZ, and a frequency of the second sonic agitation is greater than 3 MHZ,
• wherein a flow rate of the first mixture is between approximately 1000 ml/min and approximately 5000 ml/min, a flow rate of the second mixture is between approximately 1000 ml/min and approximately 3000 ml/min.

A method for cleaning a substrate, comprising:

• receiving a substrate having a surface and a plurality of insulative patterns disposed on the surface, wherein a plurality of conductive particles are disposed over the surface of the substrate;
• performing a first sonic agitation with applying a first mixture comprising an SC1 solution, deionized (DI) water, and ozone (O3) on the surface of the substrate and the plurality of insulative patterns, wherein a temperature of the first mixture is between approximately 20° C. and 40° C.;
• and
• performing a second sonic agitation with applying a second mixture on the surface of the substrate and the plurality of insulative patterns, wherein the second mixture comprises DI water and H2,
• wherein a frequency of the first sonic agitation is greater than 3 MHz, and a frequency of the second sonic agitation is greater than 3 MHz,
• wherein a flow rate of the first mixture is between approximately 1000 ml/min and approximately 5000 ml/min, a flow rate of the second mixture is between approximately 1000 ml/min and approximately 3000 ml/min.