Photovoltaic devices and semiconductor layers with group v dopants and methods for forming the same

A photovoltaic device comprising an absorber layer, wherein:

• the absorber layer comprises cadmium, tellurium, and selenium;
• the absorber layer is p-type;
• the absorber layer is doped with a Group V dopant;
• the Group V dopant comprises at least one of:
• phosphorous, arsenic, antimony, or bismuth;
• an atomic concentration of the Group V dopant in a central region of the absorber layer is between about 3×1017 cm−3 and about 1×1019 cm−3;
• the absorber layer has a carrier concentration between 8×1015 cm−3 and 6×1016 cm−3;
• the absorber layer comprises an alkali metal in the absorber layer, wherein an atomic concentration of the alkali metal is between about 2×1016 cm−3 and about 1×1019 cm−3 in the absorber layer;
• the central region is the middle 50% of the absorber layer, which is offset by 25% of the thickness of the absorber layer from each of a first surface and a second surface of the absorber layer;
• and
• the alkali metal comprises at least one of potassium (K) or rubidium (Rb), wherein:
• the absorber layer comprises oxygen in the central region of the absorber layer;
• and
• an alkali metal to oxygen ratio is between about 0.1 and about 1,000 in the central region of the absorber layer.