Infrared sensor using carbon nanotubes and method for manufacturing same

A bolometer-type infrared sensor comprising:

• a substrate;
• a first electrode on the substrate;
• a second electrode spaced from the first electrode on the substrate;
• and
• a carbon nanotube layer electrically connected with the first electrode and the second electrode,
• wherein the carbon nanotube layer comprises semiconducting carbon nanotubes in an amount of more than 66% by mass based on the total amount of carbon nanotubes, and 70% or more of the carbon nanotubes contained in the carbon nanotube layer have a diameter within a range of 0.7 to 1.1 nm and a length within a range of 500 nm to 1.5 μm,
• a distance between the first electrode and the second electrode is 10 μm to 500 μm,
• a number density of the carbon nanotubes in the carbon nanotube layer is 1 nanotube/μm2 to 1000 nanotubes/μm2, and
• the carbon nanotubes form a network structure in the carbon nanotube layer.