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US 12,356,687 B2Granted
SiC epitaxial wafer and method for manufacturing SiC epitaxial wafer
AssigneeResonac Corporation
InventorsNaoto Ishibashi, Keisuke Fukada
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Abstract
A SiC epitaxial wafer of the present invention includes a SiC single crystal substrate, and a high concentration layer that is provided on the SiC single crystal substrate and has an average value of an n-type doping concentration of 1×1018/cm3 or more and 1×1019/cm3 or less, and in-plane uniformity of the doping concentration of 30% or less.
Claims20
A SiC epitaxial wafer comprising:
- a SiC single crystal substrate;
- and
- a high concentration layer that is provided on the SiC single crystal substrate and has an average value of an n-type doping concentration of 5×1018/cm3 or more and 1×1019/cm3 or less, and in-plane uniformity of the n-type doping concentration of 20% or less,
- wherein the high concentration layer is doped with nitrogen, and
- the in-plane uniformity is obtained from
- an absolute value of (a maximum value of the n-type doping concentration−a minimum value of the n-type doping concentration)/an average value of the n-type doping concentration.
3 more elements
A SiC epitaxial wafer comprising:
- a SiC single crystal substrate;
- and
- a high concentration layer that is provided on the SiC single crystal substrate and has an average value of an n-type doping concentration of 3×1018/cm3 or more and 1×1019/cm3 or less, and in-plane uniformity of the n-type doping concentration of 20% or less,
- wherein the high concentration layer is doped with nitrogen, and
- the in-plane uniformity is obtained from
- an absolute value of (a maximum value of the n-type doping concentration−a minimum value of the n-type doping concentration)/an average value of the n-type doping concentration.
3 more elements
A SiC epitaxial wafer comprising:
- a SiC single crystal substrate;
- and
- a high concentration layer that is provided on the SiC single crystal substrate and has an average value of an n-type doping concentration of 2×1018/cm3 or more and 1×1019/cm3 or less, and in-plane uniformity of the n-type doping concentration of 20% or less,
- wherein the high concentration layer is doped with nitrogen, and
- the in-plane uniformity is obtained from
- an absolute value of (a maximum value of the n-type doping concentration−a minimum value of the n-type doping concentration)/an average value of the n-type doping concentration.
3 more elements
Dependencies are inferred from the claim text.