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US 12,355,207 B1Granted
Efficient laser system
AssigneeII-Vi Delaware, Inc.
InventorsRené Todt, Riyaz Mohammed Abdul Khadar
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Abstract
The present disclosure comprises a laser semiconductor system, with the system comprising an n-side layer, an active region, a p-side waveguide layer, and a cladding layer. The system also comprises a plurality of sections, with at least a front section at the front of the semiconductor and a rear section at the rear of the semiconductor. A thickness of the p-side waveguide layer may increase monotonically in each of the plurality of sections in the direction from the front section to the rear section.
Claims16
A laser semiconductor system, said system comprising:
- an n-side layer, an active region, a p-side waveguide layer, and a cladding layer;
- a plurality of sections, comprising at least a front section at the front of said semiconductor and a rear section at the rear of said semiconductor;
- and
- wherein a thickness of said p-side waveguide layer is monotonically increasing in each of said plurality of sections in the direction from said front section to said rear section.
1 more element
Dependencies are inferred from the claim text.