Semiconductor device and method of forming an embedded redistribution layer
AssigneeSTATS ChipPAC Pte. Ltd.
InventorsJunghwan Jang, Giwoong Nam, Myongsuk Kang
Life of this patent
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Abstract
A semiconductor device has a semiconductor die. A first dielectric layer is formed over the semiconductor die. A second dielectric layer is formed over the first dielectric layer. A trench is formed in the second dielectric layer. A via opening is formed to expose a contact pad of the semiconductor die within the trench. A seed layer is formed over the second dielectric layer. The seed layer extends into the trench and via opening. A conductive material is deposited into the via opening and trench. The conductive material is overburdened from the trench. The seed layer around the conductive material is etched in a first etching step. The conductive material is etched in a second etching step.
Claims24
A method of making a semiconductor device, comprising:
- providing a semiconductor die;
- forming a first dielectric layer over the semiconductor die;
- forming a second dielectric layer over the first dielectric layer;
- forming a trench in the second dielectric layer;
- forming a via opening to expose a contact pad of the semiconductor die within the trench;
- forming a seed layer over the second dielectric layer, wherein the seed layer extends into the trench and via opening;
- depositing a conductive material in the via opening and trench, wherein the conductive material is overburdened from the trench and a portion of the seed layer remains exposed from the conductive material;
- forming a photoresist layer over the conductive material in the trench, wherein a portion of the conductive material outside a footprint of the trench remains exposed from the photoresist layer;
- etching the seed layer around the conductive material, including the portion of the seed layer, using the photoresist layer as a mask in a first etching step, wherein the portion of the conductive material remains after etching the seed layer;
- removing the photoresist layer after the first etching step;
- and
- etching the conductive material in a second etching step after removing the photoresist layer, wherein the portion of the conductive material is removed.
A method of making a semiconductor device, comprising:
- forming a dielectric layer;
- forming a trench in the dielectric layer;
- forming a seed layer in the trench;
- depositing a conductive material in the trench;
- forming a photoresist layer over the conductive material in the trench, wherein a portion of the conductive material remains exposed from the photoresist layer;
- etching the seed layer around the conductive material using the photoresist layer and the portion of the conductive material as a mask in a first etching step;
- removing the photoresist layer after the first etching step;
- and
- etching the conductive material in a second etching step after removing the photoresist layer.
A method of making a semiconductor device, comprising:
- forming an insulating layer;
- forming a trench in the insulating layer;
- forming a seed layer in the trench;
- depositing a conductive material in the trench, wherein the conductive material is overburdened from the trench and a portion of the seed layer remains exposed from the conductive material;
- forming a photoresist layer over the conductive material in the trench, wherein a portion of the conductive material outside a footprint of the trench remains exposed from the photoresist layer;
- etching the seed layer around the conductive material, including the portion of the seed layer, using the photoresist layer as a mask, wherein the portion of the conductive material remains after etching the seed layer;
- removing the photoresist layer after etching the seed layer;
- and
- etching the conductive material after removing the photoresist layer, wherein the portion of the conductive material is removed.
A method of making a semiconductor device, comprising:
- forming an insulating layer;
- forming a trench in the insulating layer;
- forming a seed layer in the trench;
- depositing a conductive material in the trench over the seed layer;
- forming a photoresist layer over the trench, wherein a portion of the conductive material remains exposed from the photoresist layer;
- and
- etching the seed layer around the trench using the photoresist layer and the portion of the conductive material as a mask;
- and
- etching the conductive material in a second etching step after etching the seed layer.
Dependencies are inferred from the claim text.