Method of forming optical proximity correction model and method of fabricating semiconductor device using the same

A method of fabricating a semiconductor device, comprising:

• designing a layout;
• performing an optical proximity correction (OPC) process on the designed layout to generate an OPC-corrected layout;
• and
• performing a photolithography process using a photomask, which is manufactured based on the OPC-corrected layout, to form photoresist patterns on a substrate,
• wherein the OPC process comprises,
• forming an OPC model,
• correcting the OPC model, based on a simulation result on the OPC model, and
• verifying the corrected OPC model, and
• wherein the forming of the OPC model comprises,
• obtaining an SEM image, which is an average image of a plurality of images on the photoresist patterns taken using one or more scanning electron microscopes, and obtaining a GDS image, which is obtained by imaging the layout,
• aligning the SEM image and the GDS image,
• performing an image filtering process on the SEM image,
• extracting a contour from the SEM image, and
• verifying the contour by using a genetic algorithm.