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US 12,354,905 B2Granted
Gate and locos dielectrics grown using locos processing
AssigneeTexas Instruments Incorporated
InventorsMark Francis Arendt, Damien Thomas Gilmore
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Abstract
Described examples include a method having steps of forming an isolation pad oxide layer on a substrate and forming and patterning a silicon nitride layer on the isolation pad oxide layer. The method also has steps of oxidizing portions of the substrate not covered by the silicon nitride layer to form a LOCOS layer and oxidizing the silicon nitride layer in an oxidizing ambient containing a chlorine source to form a silicon dioxide layer.
Claims20
A method comprising:
- forming an isolation pad oxide layer on a substrate;
- forming and patterning a silicon nitride layer on the isolation pad oxide layer;
- oxidizing portions of the substrate not covered by the silicon nitride layer to form a LOCOS layer;
- subsequent to forming the LOCOS layer, oxidizing the silicon nitride layer in an oxidizing ambient containing a chlorine source to form a silicon dioxide layer;
- and
- thinning the silicon dioxide layer.
3 more elements
A method comprising:
- forming an isolation pad oxide layer on a substrate;
- forming and patterning a silicon nitride layer on the isolation pad oxide layer;
- oxidizing portions of the substrate not covered by the silicon nitride layer to form a LOCOS layer;
- subsequent to forming the LOCOS layer:
- etching the silicon nitride layer to form a thinned silicon nitride layer;
- and
- oxidizing the thinned silicon nitride layer in an oxidizing ambient containing a chlorine source to convert the thinned silicon nitride layer into a silicon oxide layer.
4 more elements
A method comprising:
- forming an isolation pad oxide layer on a substrate;
- forming and patterning a silicon nitride layer on the isolation pad oxide layer;
- oxidizing portions of the substrate not covered by the silicon nitride layer to form a LOCOS layer;
- oxidizing the silicon nitride layer in an oxidizing ambient containing a chlorine source to form a silicon dioxide layer;
- and
- thinning an oxide layer including the combination of the isolation pad oxide layer and the silicon dioxide layer.
3 more elements
Dependencies are inferred from the claim text.