Plasma processing method and plasma processing apparatus

A plasma processing method comprising:

• providing a substrate including a silicon-containing film and a mask film having an opening pattern, on a substrate support in a chamber of a plasma processing apparatus;
• and
• etching the silicon-containing film using the mask film as a mask, with a plasma generated by a plasma generator provided in the chamber to face the substrate support,
• wherein the etching includes:
• supplying a processing gas containing one or more gases including carbon, hydrogen, and fluorine into the chamber;
• generating a plasma from the processing gas by supplying a source RF signal to the plasma generator;
• and
• supplying a bias signal to the substrate support, and
• wherein, in the etching, the silicon-containing film is etched by at least hydrogen fluoride generated from the processing gas, while forming a carbon-containing film on at least a part of a surface of the mask film, and
• wherein, the providing further includes:
• forming an EUV resist on the silicon-containing film;
• exposing the EUV resist thereby forming the mask film having the opening pattern;
• and
• disposing the substrate on which the mask film is formed, on the substrate support.

A plasma processing apparatus comprising:

• a processing chamber configured to perform a plasma processing;
• a substrate support disposed in the processing chamber and configured to dispose a substrate;
• a plasma generator provided in the processing chamber to face the substrate support;
• and
• a controller,
• wherein the controller is configured to perform:
• providing the substrate including a silicon-containing film and a mask film having an opening pattern, on the substrate support, and
• etching the silicon-containing film using the mask film as a mask, with plasma generated by the plasma generator,
• wherein the etching includes:
• supplying a processing gas containing one or more gases including carbon, hydrogen, and fluorine into the processing chamber;
• generating plasma from the processing gas by supplying a source RF signal to the plasma generator;
• and
• supplying a bias signal to the substrate support, and
• wherein, in the etching, the silicon-containing film is etched by at least hydrogen fluoride generated from the processing gas, while forming a carbon-containing film on at least a part of a surface of the mask film.