Perovskite betavoltaic-photovoltaic battery

A method for manufacturing a perovskite betavoltaic-photovoltaic battery, wherein the perovskite betavoltaic-photovoltaic battery comprises a first electrode, a first charge transport layer, a perovskite layer, a second charge transport layer, and a second electrode in sequence, and the manufacturing method comprises:

• a step of forming the first charge transport layer on the first electrode;
• a step of forming the perovskite layer on the first charge transport layer;
• a step of forming the second charge transport layer on the perovskite layer;
• and
• a step of forming the second electrode on the second charge transport layer, wherein
• the first electrode is a transparent electrode;
• the first charge transport layer is an electron transport layer and the second charge transport layer is a hole transport layer, or, the first charge transport layer is a hole transport layer and the second charge transport layer is an electron transport layer;
• the perovskite layer is doped with a fluorescent substance;
• at least one of the first electrode, the first charge transport layer, the second charge transport layer, or the second electrode is radioactive;
• when the first electrode and/or the second electrode is radioactive, the first electrode and/or the second electrode is an irradiated electrode formed by compounding a radioactive source and a conductor material;
• and, when the first charge transport layer and/or the second charge transport layer is radioactive, the first charge transport layer and/or the second charge transport layer is an irradiated semiconductor formed by compounding a radioactive source and a semiconductor material;
• when the first electrode and/or the second electrode is an irradiated electrode, the irradiated electrode is compounded of the radioactive source and the conductor material by at least one method selected from:
• a chemical bath deposition method, an electrochemical deposition method, a chemical vapor deposition method, a physical epitaxial growth method, a thermal co-evaporation method, an atomic layer deposition method, a magnetron sputtering method, a precursor solution spin-coating method, a precursor solution slot-die coating method, a precursor solution scrape coating method, and a mechanical pressing method;
• and
• when the first charge transport layer and/or the second charge transport layer is an irradiated semiconductor, the irradiated semiconductor is compounded of the radioactive source and the semiconductor material by at least one method selected from:
• a chemical bath deposition method, an electrochemical deposition method, a chemical vapor deposition method, a physical epitaxial growth method, a thermal co-evaporation method, an atomic layer deposition method, a magnetron sputtering method, a precursor solution spin-coating method, a precursor solution slot-die coating method, a precursor solution scrape coating method, and a mechanical pressing method.