Multilayer thin film lithium-containing optical devices

An electro-optic device, comprising:

• a substrate structure;
• a first electro-optic structure on the substrate structure, the first electro-optic structure including a first layer, a second layer on the first layer, and a third layer on the second layer, the first layer including a first thin film lithium-containing (TFLC) electro-optic material having a first thickness, the second layer including a second TFLC electro-optic material and having a second thickness, the third layer including a third TFLC electro-optic material and having a third thickness, the first electro-optic structure including a waveguide;
• and
• a second electro-optic structure on the substrate structure, the second electro-optic structure including the first layer and at least a portion of the second layer but omitting the third layer, the second electro-optic structure including a bend in the waveguide, a TE0 to TM0 mode conversion being reduced for the second electro-optic structure.

A method, comprising:

• providing at least one electro-optic structure from at least one lithium-containing electro-optic layer on a substrate structure, the at least one electro-optic structure including a waveguide, the providing the at least one electro-optic structure including performing at least three etches of the at least one lithium-containing electro-optic layer such that the at least one electro-optic structure includes a first layer, a second layer on the first layer, and a third layer on the second layer, the first layer including a first thin film lithium-containing (TFLC) electro-optic material having a first thickness, the second layer including a second TFLC electro-optic material and having a second thickness, the third layer including a third TFLC electro-optic material and having a third thickness, the at least one lithium-containing electro-optic layer including the first TFLC electro-optic material, the second TFLC electro-optic material, and the third TFLC electro-optic material;
• wherein the first layer has a first width in the first electro-optic structure, the second layer has a second width in the at least one electro-optic structure, and the third layer has a third width in the at least one electro-optic structure;
• and
• wherein a portion of the waveguide is configured with a bend, the third layer being omitted at the bend, a TE0 to TM0 mode conversion being reduced.