US 12,353,068 B2Granted

Method for on-silicon integration of a component III-V and on-silicon integrated component III-V

AssigneesCommissariat A L'energie Atomique Et Aux Energies Alternatives, Thales

InventorsDelphine Neel, David Bitauld

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Abstract

A method for on-silicon integration of a III-V-based material component includes providing a first substrate having a silicon-based optical layer including a waveguide, transferring a second substrate of III-V-based material on the optical layer, and forming the III-V component from the second substrate, so as to enable a coupling between the waveguide and the III-V component, by preserving a III-V-based material layer extending laterally. The method also includes forming by epitaxy from the III-V layer, an InP:Fe-based structure laterally bordering the III-V component, forming a layer including contacts configured to contact the III-V component, and transferring a third silicon-based substrate onto the layer including the contacts.

Claims12

Dependent claims

A method for on-silicon integration of a III-V-based material component comprising:

providing a first substrate comprising a silicon-based optical layer, said optical layer comprising at least one waveguide,
transferring a second III-V-based material substrate on the optical layer,
forming the component from the second substrate, in a proximity of the waveguide so as to enable a coupling between the waveguide and the component, by preserving a III-V-based material layer extending laterally from the component,
forming by epitaxy from the III-V-based material layer an InP:Fe-based structure laterally bordering the component,
forming a layer comprising contacts configured to electrically contact the component, on a face of the component opposite the optical layer, and
transferring a third silicon-based substrate on the layer comprising the contacts.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application: 18/053,959Filed 9 Nov 2022
Priority: FR 21 118959 Nov 2021
Published: US 2023/0145652 A111 May 2023
Granted: 8 Jul 2025
Term ends: Not estimatedThe source records don’t support an estimate.

Classification31 codes

G02F 1/01708
Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells: in an optical wavequide structure
H01S 5/02469
Arrangements for thermal management: passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active…
C23C 16/0227
Pretreatment of the material to be coated: by cleaning or etching
C23C 16/18
Characterised by the deposition of metallic material: from metallo-organic compounds