Hydrophobic low-dielectric-constant film and preparation method therefor
AssigneeJiangsu Favored Nanotechnology Co., Ltd.
InventorJian Zong
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Abstract
The present disclosure provides a hydrophobic low-dielectric-constant film and a preparation method therefor. The low-dielectric-constant film is formed from one or more fluorine-containing compounds A by means of a plasma enhanced chemical vapor deposition method, and the one or more fluorine-containing compounds comprise a compound having the general formula CxSiyOmHnF2x+2y−n+2 or CxSiyOmHnF2x+2y−n, x being an integer from 1 to 20, y being an integer from 0 to 8, m being an integer from 0 to 6, and n being 0, 3, 6, 7, 9, 10, 12, 13, 15, 16, 17 and 19. Thus, a nano-film having a low dielectric constant and good hydrophobicity is formed on the surface of a substrate.
Claims28
A hydrophobic low-dielectric-constant film, formed of a fluorine-containing compound A and a compound B by plasma enhanced chemical vapor deposition, wherein the fluorine-containing compound A comprises one or more compounds having a general formula CxSiyOmHnF2x+2y−n+2 or CxSiyOmHnF2x+2y−n, wherein x is an integer from 1 to 20, y is an integer from 0 to 8, m is an integer from 0 to 6, and n is 0, 3, 6, 7, 9, 10, 12, 13, 15, 16, 17, 19, wherein the compound B comprises one or more selected from a group consisting of:
- butadiene, pentadiene, 1,2-epoxy-5-hexene, and heptadiene.
Dependencies are inferred from the claim text.