Gallium nitride particles and method for producing same
AssigneeTosoh Corporation
InventorsMasami Mesuda, Hideto Kuramochi, Shinichi Hara
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Abstract
High-purity gallium nitride particles having a low oxygen content suitable for a raw material or a sintered body is provided. Gallium nitride particles characterized in that the oxygen content is 0.5 at % or less and the total impurity amount of elements, Si, Ge, Sn, Pb, Be, Mg, Ca, Sr, Ba, Zn and Cd, is less than 10 wtppm are used.
Claims11
Gallium nitride particles characterized in that an oxygen content is 0.5 at % or less, and a total impurity amount of elements, Si, Ge, Sn, Pb, Be, Mg, Ca, Sr, Ba, Zn and Cd, is less than 10 wtppm, and an Si impurity amount is less than 1 wtppm.
Gallium nitride particles characterized in that an oxygen content is 0.5 at % or less,
- wherein the gallium nitride particles comprise an Si impurity, and an Si impurity amount is less than 1 wtppm.
Dependencies are inferred from the claim text.