Display substrate and manufacturing method thereof, and display apparatus

A method for manufacturing a display substrate, comprising:

• forming an active structure layer on a base substrate, wherein the active structure layer comprises a first active layer and a second active layer, a material of the first active layer comprises low-temperature polysilicon and a material of the second active layer comprises oxide semiconductor;
• and
• forming a source-drain structure layer on the active structure layer, wherein the source-drain structure layer comprises a first source-drain electrode and a second source-drain electrode, the first source-drain electrode overlaps with a first side surface of the first active layer through a first via hole and the second source-drain electrode overlaps with a second side surface of the second active layer through a second via hole;
• the first side surface is a surface parallel to the base substrate, and the second side surface is a surface intersecting with the substrate,
• wherein the active structure layer comprises:
• a fifth insulating layer covering the second active layer, a second gate electrode disposed on the fifth insulating layer, and a sixth insulating layer covering the second gate electrode;
• the second via hole comprises a communication hole provided on the fifth insulating layer and the sixth insulating layer and a contact hole provided on the second active layer, the communication hole communicates with the contact hole, and the second source-drain electrode overlaps with the second side surface of the second active layer through the contact hole;
• at an interface between the second active layer and the fifth insulating layer, a distance between boundaries of the contact hole at the interface is a first distance, and a distance between boundaries of the communication hole at the interface is a second distance, and the first distance is greater than the second distance;
• and
• the first distance is 1.01 to 1.05 times the second distance.