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US 12,349,530 B2Granted
Photovoltaic device
AssigneeOxford Photovoltaics Limited
InventorsBen Williams, Nicola Beaumont, Edward James William Crossland
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AssigneeOxford Photovoltaics Limited
InventorsBen Williams, Nicola Beaumont, Edward James William Crossland
Estimating the term…
A photovoltaic device comprises a PIN structure in which a p-type hole transporting layer (2) is carried by a substrate (1) and a perovskite layer (3) and an n-type electron transporting layer (4) are arranged in sequence on the p-type layer. A light transmissive electrically conductive layer (9) is provided on top of the n-type electron transporting layer to form a light receiving top surface. Between the n-type electron transporting layer and the light transmissive conductive layer there is provided a structure comprising two inorganic electrically insulative layers (6, 8) having a layer of a conductive material (7) therebetween, wherein the two inorganic electrically insulative layers comprise a material having a band gap of greater than 4.5 eV and the layer of a conductive material comprises a material having a band gap of less than the band gap of the electrically insulative layers, wherein each electrically insulative layer forms a type-1 offset junction with the layer of conductive material.
A photovoltaic device comprising a PIN structure in which a p-type hole transporting layer is carried by a substrate and a perovskite layer and an n-type electron transporting layer are arranged in sequence on the p-type layer, and a light transmissive electrically conductive layer provided on top of the n-type electron transporting layer to form a light receiving top surface, characterised in that between the n-type electron transporting layer and the light transmissive conductive layer there is provided an interfacial structure comprising two inorganic electrically insulative layers having a layer of a conductive material therebetween, wherein each of the two inorganic electrically insulative layers comprise a material having a band gap of greater than 4.5 eV and the layer of a conductive material comprises a material having a band gap of less than the band gap of each of the two electrically insulative layers, wherein each electrically insulative layer forms a type-1 offset junction with the layer of conductive material.
Dependencies are inferred from the claim text.