Method of fabricating a conductive layer on an IC using non-lithographic fabrication techniques
AssigneePragmatic Semiconductor Limited
InventorsKen Williamson, Richard Price
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Abstract
A method for fabricating a thin-film integrated circuit, IC, including a plurality of electronic components, the method comprising: forming, using a first fabrication technique, the plurality of electronic components, and forming, using a second fabrication technique, a conductive layer on the plurality of electronic components to form a redistribution layer, RDL, wherein the first fabrication technique includes photolithographic patterning, and the first fabrication technique is different to the second fabrication technique.
Claims14
A method for fabricating a thin-film integrated circuit, IC, including a plurality of electronic components, the method comprising:
- forming, using a first fabrication technique, the plurality of electronic components, and
- forming, using a second fabrication technique, a conductive layer on the plurality of electronic components to form a redistribution layer, RDL,
- wherein the first fabrication technique includes photolithographic patterning, and the first fabrication technique is different to the second fabrication technique, and
- wherein the conductive layer is formed to include one or more protrusions configured to form an electrical connection with an external circuit by penetrating a part of the external circuit when the thin-film IC is bonded to the external circuit.
Dependencies are inferred from the claim text.