Surface modification layer for conductive feature formation
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJian-Jou Lian, Kuo-Bin Huang, Neng-Jye Yang, Li-Min Chen
Life of this patent
Estimating the term…
Abstract
Embodiments described herein relate generally to methods for forming a conductive feature in a dielectric layer in semiconductor processing and structures formed thereby. In some embodiments, a structure includes a dielectric layer over a substrate, a surface modification layer, and a conductive feature. The dielectric layer has a sidewall. The surface modification layer is along the sidewall, and the surface modification layer includes phosphorous and carbon. The conductive feature is along the surface modification layer.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- depositing a first dielectric layer and a second dielectric layer over a conductive region, the conductive region being over a semiconductor substrate;
- forming an opening through both the first dielectric layer and the second dielectric layer to expose the conductive region;
- and
- replacing OH groups on a surface of the second dielectric layer within the opening with a monolayer comprising phosphoric acid derivative molecules, the monolayer having a thickness no thicker than a length of one of the phosphoric acid derivative molecules, wherein the first dielectric layer is free from the monolayer.
A method of manufacturing a semiconductor device, the method comprising:
- forming a first sidewall of dielectric materials over a conductive region over a semiconductor substrate;
- and
- covering a first portion but not a second portion of the first sidewall with a monolayer, the monolayer comprising phosphoric acid derivative molecules, the monolayer having a thickness no thicker than a length of one of the phosphoric acid derivative molecules.
A method of manufacturing a semiconductor device, the method comprising:
- lining only a portion of a sidewall of an opening with a monolayer, the monolayer comprising phosphoric acid derivative molecules, the monolayer having a thickness no thicker than a length of one of the phosphoric acid derivative molecules;
- and
- filling the opening with a conductive material to make electrical connection with an underlying conductive region over a semiconductor substrate, the conductive material being free from a barrier layer.
Dependencies are inferred from the claim text.